Sfoglia per Autore
Low energy yield spectroscopy as a novel technique for determining band offsets: application to the c-Si/a-Si:H heterostructure
1995-01-01 M., Sebastiani; DI GASPARE, Luciana; G., Capellini; C. BITTENCOURT AND F., Evangelisti
Photoelectric yield studies of c-Si/a-Si:H interfaces
1995-01-01 M., Sebastiani; DI GASPARE, Luciana; C., Bittencourt; AND F., Evangelisti
Ge/Si(100) heterostructures: a photoemission and low-energy yield spectroscopy investigation
1996-01-01 DI GASPARE, Luciana; G., Capellini; M., Sebastiani; C., Chudoba; AND F., Evangelisti
Atomic Force Microscopy and photoluminescence study of Ge layers and self-organized Ge quantum dots on Si(100)
1996-01-01 E., Palange; G., Capellini; DI GASPARE, Luciana; AND F., Evangelisti
Solid-phase epitaxi induced by low-power pulsed-laser annealing of III-V compound semiconductors
1996-01-01 G., Vitali; L., Palumbo; M., Rossi; G., Zollo; C., Pizzuto; DI GASPARE, Luciana; AND F., Evangelisti
Low energy yield spectroscopy determination of band offsets: application to the epitaxial Ge/Si(100) heterostructure
1996-01-01 DI GASPARE, Luciana; G., Capellini; C., Chudoba; M., Sebastiani; AND F., Evangelisti
Atomic Force Microscopy study of self-organized Ge islands grown on Si(100) by Low Pressure Chemical Vapour Deposition
1997-01-01 G., Capellini; DI GASPARE, Luciana; F. EVANGELISTI AND E., Palange
Ge/Si (001) Photodetector for Near Infrared Light”
1997-01-01 L., Colace; G., Masini; F., Galluzzi; Assanto, Gaetano; G., Capellini; DI GASPARE, Luciana; AND F., Evangelisti
Near infrared light detectors based on UHV-CVD epitaxial Ge on Si (100)
1998-01-01 Colace, L; Masini, G; Galluzzi, F; Assanto, Gaetano; Capellini, G; DI GASPARE, Luciana; Palange, E; Evangelisti, F.
Spectroscopic ellipsometric study of the size evolution of Ge islands grown on Si (100)
1998-01-01 Palange, E; Ragni, L; DI GASPARE, Luciana; Capellini, G; Evangelisti, F.
Metal-semiconductor-metal near infrared light detector based on epitaxial Ge on Si
1998-01-01 Colace, L; Masini, G; Galluzzi, F; Assanto, Gaetano; Capellini, G; DI GASPARE, Luciana; Palange, E; Evangelisti, F.
The photoelectric yield technique for the characterization of the semiconductor interfaces
1998-01-01 F., Evangelisti; DI GASPARE, Luciana
Metal-semiconductor-metal near-infrared light detector based on epitaxial Ge/Si
1998-01-01 Colace, L; Masini, G; Galluzzi, F; Assanto, Gaetano; Capellini, G; DI GASPARE, Luciana; Palange, E; Evangelisti, F.
Electronic states of thin epitaxial layers of Ge on Si(100)
1998-01-01 DI GASPARE, Luciana; G., Capellini; E., Cianci; AND F., Evangelisti
Investigation of Ge on Si(100) quantum wells by photoelectron spectroscopies
1998-01-01 DI GASPARE, Luciana; Capellini, G; Cianci, E; Evangelisti, F.
Metal-Ge-Si heterostructures for near infrared light detection
1999-01-01 L., Colace; G., Masini; F., Galluzzi; Assanto, Gaetano; G., Capellini; DI GASPARE, Luciana; E., Palange; AND F., Evangelisti
Influence of dislocations on vertical ordering of Ge islands in Si Ge multilayers grown by low pressure chemical vapour deposition
1999-01-01 Capellini, G; DI GASPARE, Luciana; Evangelisti, F; Palange, E; Notargiacomo, A; Spinella, C; Lombardo, S.
Ge-Si intermixing in Ge quantum dots on Si(100) and Si(111)
2000-01-01 Boscherini, F.; Capellini, G.; DI GASPARE, Luciana; Rosei, F.; Motta, N.; Mobilio, AND S.
Strain relaxation by pit formation in SiGe alloy films grown on Si(001)
2000-01-01 DI GASPARE, Luciana; E., Palange; G., Capellini; AND F., Evangelisti
Ge-Si intermixing in Ge quantum dots on Si
2000-01-01 Boscherini, F.; Capellini, G.; DI GASPARE, Luciana; DE SETA, M.; Rosei, F.; Sgarlata, A.; Motta, N.; Mobilio, AND S.
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Low energy yield spectroscopy as a novel technique for determining band offsets: application to the c-Si/a-Si:H heterostructure | 1-gen-1995 | M., Sebastiani; DI GASPARE, Luciana; G., Capellini; C. BITTENCOURT AND F., Evangelisti | |
| Photoelectric yield studies of c-Si/a-Si:H interfaces | 1-gen-1995 | M., Sebastiani; DI GASPARE, Luciana; C., Bittencourt; AND F., Evangelisti | |
| Ge/Si(100) heterostructures: a photoemission and low-energy yield spectroscopy investigation | 1-gen-1996 | DI GASPARE, Luciana; G., Capellini; M., Sebastiani; C., Chudoba; AND F., Evangelisti | |
| Atomic Force Microscopy and photoluminescence study of Ge layers and self-organized Ge quantum dots on Si(100) | 1-gen-1996 | E., Palange; G., Capellini; DI GASPARE, Luciana; AND F., Evangelisti | |
| Solid-phase epitaxi induced by low-power pulsed-laser annealing of III-V compound semiconductors | 1-gen-1996 | G., Vitali; L., Palumbo; M., Rossi; G., Zollo; C., Pizzuto; DI GASPARE, Luciana; AND F., Evangelisti | |
| Low energy yield spectroscopy determination of band offsets: application to the epitaxial Ge/Si(100) heterostructure | 1-gen-1996 | DI GASPARE, Luciana; G., Capellini; C., Chudoba; M., Sebastiani; AND F., Evangelisti | |
| Atomic Force Microscopy study of self-organized Ge islands grown on Si(100) by Low Pressure Chemical Vapour Deposition | 1-gen-1997 | G., Capellini; DI GASPARE, Luciana; F. EVANGELISTI AND E., Palange | |
| Ge/Si (001) Photodetector for Near Infrared Light” | 1-gen-1997 | L., Colace; G., Masini; F., Galluzzi; Assanto, Gaetano; G., Capellini; DI GASPARE, Luciana; AND F., Evangelisti | |
| Near infrared light detectors based on UHV-CVD epitaxial Ge on Si (100) | 1-gen-1998 | Colace, L; Masini, G; Galluzzi, F; Assanto, Gaetano; Capellini, G; DI GASPARE, Luciana; Palange, E; Evangelisti, F. | |
| Spectroscopic ellipsometric study of the size evolution of Ge islands grown on Si (100) | 1-gen-1998 | Palange, E; Ragni, L; DI GASPARE, Luciana; Capellini, G; Evangelisti, F. | |
| Metal-semiconductor-metal near infrared light detector based on epitaxial Ge on Si | 1-gen-1998 | Colace, L; Masini, G; Galluzzi, F; Assanto, Gaetano; Capellini, G; DI GASPARE, Luciana; Palange, E; Evangelisti, F. | |
| The photoelectric yield technique for the characterization of the semiconductor interfaces | 1-gen-1998 | F., Evangelisti; DI GASPARE, Luciana | |
| Metal-semiconductor-metal near-infrared light detector based on epitaxial Ge/Si | 1-gen-1998 | Colace, L; Masini, G; Galluzzi, F; Assanto, Gaetano; Capellini, G; DI GASPARE, Luciana; Palange, E; Evangelisti, F. | |
| Electronic states of thin epitaxial layers of Ge on Si(100) | 1-gen-1998 | DI GASPARE, Luciana; G., Capellini; E., Cianci; AND F., Evangelisti | |
| Investigation of Ge on Si(100) quantum wells by photoelectron spectroscopies | 1-gen-1998 | DI GASPARE, Luciana; Capellini, G; Cianci, E; Evangelisti, F. | |
| Metal-Ge-Si heterostructures for near infrared light detection | 1-gen-1999 | L., Colace; G., Masini; F., Galluzzi; Assanto, Gaetano; G., Capellini; DI GASPARE, Luciana; E., Palange; AND F., Evangelisti | |
| Influence of dislocations on vertical ordering of Ge islands in Si Ge multilayers grown by low pressure chemical vapour deposition | 1-gen-1999 | Capellini, G; DI GASPARE, Luciana; Evangelisti, F; Palange, E; Notargiacomo, A; Spinella, C; Lombardo, S. | |
| Ge-Si intermixing in Ge quantum dots on Si(100) and Si(111) | 1-gen-2000 | Boscherini, F.; Capellini, G.; DI GASPARE, Luciana; Rosei, F.; Motta, N.; Mobilio, AND S. | |
| Strain relaxation by pit formation in SiGe alloy films grown on Si(001) | 1-gen-2000 | DI GASPARE, Luciana; E., Palange; G., Capellini; AND F., Evangelisti | |
| Ge-Si intermixing in Ge quantum dots on Si | 1-gen-2000 | Boscherini, F.; Capellini, G.; DI GASPARE, Luciana; DE SETA, M.; Rosei, F.; Sgarlata, A.; Motta, N.; Mobilio, AND S. |
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