Sfoglia per Autore
Low energy Yield Spectroscopy as a novel technique for determining band offsets: application to the c-Si/a-Si:H heterostructure
1995-01-01 Sebastiani, M; Di Gaspare, L; Capellini, Giovanni; Bittencourt, C; Evangelisti, F.
Low energy Yield Spectroscopy determination of band offsets: application to the epitaxial Ge/Si(100) heterostructure
1996-01-01 Di Gaspare, L; Capellini, Giovanni; Chudoba, C; Sebastiani, Marco; Evangelisti, F.
Ge/Si(100) heterostructures: a Photoemission and low-energy Yield Spectroscopy investigation
1996-01-01 Di Gaspare, L; Capellini, Giovanni; Sebastiani, Marco; Chudoba, C; Evangelisti, F.
Atomic Force Microscopy and Photoluminescence study of Ge layers and self-organized Ge quantum dots on Si(100)
1996-01-01 Palange, E; Capellini, Giovanni; di Gaspare, L; Evangelisti, F.
Ge/Si (001) photodetector for near infrared light
1997-01-01 Colace, L; Masini, G; Galluzzi, F; Assanto, Gaetano; Capellini, Giovanni; Di Gaspare, L; Evengelisti, F.
Atomic force microscopy study of self-organized Ge islands grown on Si(100) by low pressure chemical vapor deposition
1997-01-01 Capellini, Giovanni; Di Gaspare, L; Evangelisti, F; Palange, E.
Morphology evolution and growth dynamic of single- and multi-layers of Ge islands on Si (100)
1998-01-01 Capellini, Giovanni; L., DI GASPARE; F., Evangelisti; E., Palange; C., Spinella; AND S., Lombardo
NEAR INFRARED LIGHT DETECTORS BASED ON UHV_CVD EPITAXIAL GERMANIUM ON SILICON
1998-01-01 L., Colace; G., Masini; F., Galluzzi; Assanto, Gaetano; Capellini, Giovanni; L., DI GASPARE; E., Palange; AND F., Evangelisti
Investigation of Ge on Si(100) quantum wells by Photoelectron Spectroscopies
1998-01-01 Di Gaspare, L; Capellini, Giovanni; Cianci, E; Evangelisti, F.
Metal-Semiconductor-Metal Near Infrared Light Detector Based on Epitaxial Ge/Si
1998-01-01 L., Colace; G., Masini; F., Galluzzi; Assanto, Gaetano; C., Capellini; L., Di Gaspare; E., Palange; F., Evangelisti
Electronic states of thin epitaxial layers of Ge on Si(100)
1998-01-01 Di Gaspare, L; Capellini, Giovanni; Cianci, E; Evangelisti, F.
Further insight in Cromium growth on the surface of an organometallic polymer film
1998-01-01 Polzonetti, G; Iucci, G; Russo, Mv; Paolucci, G; Cocco, D; Capellini, Giovanni
METAL-SEMICONDUCTOR-METAL NEAR INFRARED LIGHT DETECTOR BASED ON EPITAXIAL GE ON SI
1998-01-01 Colace, L; Masini, G; Galluzzi, F; Assanto, Gaetano; Capellini, Giovanni; DI GASPARE, L; Palange, E; Evangelisti, F.
Spectroscopic ellipsometric study of strain relaxation and size evolution of Ge islands grown on Si(100)
1998-01-01 Palange, E; Ragni, L; Di Gaspare, L; Capellini, Giovanni; Evangelisti, F.
Metal-Semiconductor-Metal near infrared light detector based on epitaxial Ge on Si
1998-01-01 Colace, L; Masini, G; Galluzzi, F; Assanto, Gaetano; Capellini, Giovanni; Di Gaspare, L; Palange, E; Evangelisti, F.
Atomic Force Microscopy Lithography as a nanodevice development technique
1999-01-01 Notargiacomo, A; Foglietti, V; Cianci, E; Capellini, Giovanni; Adami, M; Faraci, P; Evangelisti, F; Nicolini, C.
Evolution of strained Ge islands grown on Si(111): a scanning probe microscopy study
1999-01-01 Capellini, Giovanni; Motta, N; Sgarlata, A; Calarco, R.
Influence of dislocations on vertical ordering of Ge islands in Si Ge multilayers grown by low pressure chemical vapour deposition
1999-01-01 Capellini, Giovanni; Di Gaspare, L; Evangelisti, F; Palange, E; Notargiacomo, A; Spinella, C; Lombardo, S.
Metal-Ge-Si diodes for near-infrared light detection
1999-01-01 Colace, L; Masini, G; Galluzzi, F; Assanto, Gaetano; Capellini, Giovanni; Di Gaspare, L; Palange, E; Evangelisti, F.
Ge-Si intermixing in Ge quantum dots on Si
2000-01-01 Boscherini, F; Capellini, Giovanni; Di Gaspare, L; De Seta, M; Rosei, F; Sgarlata, A; Motta, N; Mobilio, Settimio
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Low energy Yield Spectroscopy as a novel technique for determining band offsets: application to the c-Si/a-Si:H heterostructure | 1-gen-1995 | Sebastiani, M; Di Gaspare, L; Capellini, Giovanni; Bittencourt, C; Evangelisti, F. | |
| Low energy Yield Spectroscopy determination of band offsets: application to the epitaxial Ge/Si(100) heterostructure | 1-gen-1996 | Di Gaspare, L; Capellini, Giovanni; Chudoba, C; Sebastiani, Marco; Evangelisti, F. | |
| Ge/Si(100) heterostructures: a Photoemission and low-energy Yield Spectroscopy investigation | 1-gen-1996 | Di Gaspare, L; Capellini, Giovanni; Sebastiani, Marco; Chudoba, C; Evangelisti, F. | |
| Atomic Force Microscopy and Photoluminescence study of Ge layers and self-organized Ge quantum dots on Si(100) | 1-gen-1996 | Palange, E; Capellini, Giovanni; di Gaspare, L; Evangelisti, F. | |
| Ge/Si (001) photodetector for near infrared light | 1-gen-1997 | Colace, L; Masini, G; Galluzzi, F; Assanto, Gaetano; Capellini, Giovanni; Di Gaspare, L; Evengelisti, F. | |
| Atomic force microscopy study of self-organized Ge islands grown on Si(100) by low pressure chemical vapor deposition | 1-gen-1997 | Capellini, Giovanni; Di Gaspare, L; Evangelisti, F; Palange, E. | |
| Morphology evolution and growth dynamic of single- and multi-layers of Ge islands on Si (100) | 1-gen-1998 | Capellini, Giovanni; L., DI GASPARE; F., Evangelisti; E., Palange; C., Spinella; AND S., Lombardo | |
| NEAR INFRARED LIGHT DETECTORS BASED ON UHV_CVD EPITAXIAL GERMANIUM ON SILICON | 1-gen-1998 | L., Colace; G., Masini; F., Galluzzi; Assanto, Gaetano; Capellini, Giovanni; L., DI GASPARE; E., Palange; AND F., Evangelisti | |
| Investigation of Ge on Si(100) quantum wells by Photoelectron Spectroscopies | 1-gen-1998 | Di Gaspare, L; Capellini, Giovanni; Cianci, E; Evangelisti, F. | |
| Metal-Semiconductor-Metal Near Infrared Light Detector Based on Epitaxial Ge/Si | 1-gen-1998 | L., Colace; G., Masini; F., Galluzzi; Assanto, Gaetano; C., Capellini; L., Di Gaspare; E., Palange; F., Evangelisti | |
| Electronic states of thin epitaxial layers of Ge on Si(100) | 1-gen-1998 | Di Gaspare, L; Capellini, Giovanni; Cianci, E; Evangelisti, F. | |
| Further insight in Cromium growth on the surface of an organometallic polymer film | 1-gen-1998 | Polzonetti, G; Iucci, G; Russo, Mv; Paolucci, G; Cocco, D; Capellini, Giovanni | |
| METAL-SEMICONDUCTOR-METAL NEAR INFRARED LIGHT DETECTOR BASED ON EPITAXIAL GE ON SI | 1-gen-1998 | Colace, L; Masini, G; Galluzzi, F; Assanto, Gaetano; Capellini, Giovanni; DI GASPARE, L; Palange, E; Evangelisti, F. | |
| Spectroscopic ellipsometric study of strain relaxation and size evolution of Ge islands grown on Si(100) | 1-gen-1998 | Palange, E; Ragni, L; Di Gaspare, L; Capellini, Giovanni; Evangelisti, F. | |
| Metal-Semiconductor-Metal near infrared light detector based on epitaxial Ge on Si | 1-gen-1998 | Colace, L; Masini, G; Galluzzi, F; Assanto, Gaetano; Capellini, Giovanni; Di Gaspare, L; Palange, E; Evangelisti, F. | |
| Atomic Force Microscopy Lithography as a nanodevice development technique | 1-gen-1999 | Notargiacomo, A; Foglietti, V; Cianci, E; Capellini, Giovanni; Adami, M; Faraci, P; Evangelisti, F; Nicolini, C. | |
| Evolution of strained Ge islands grown on Si(111): a scanning probe microscopy study | 1-gen-1999 | Capellini, Giovanni; Motta, N; Sgarlata, A; Calarco, R. | |
| Influence of dislocations on vertical ordering of Ge islands in Si Ge multilayers grown by low pressure chemical vapour deposition | 1-gen-1999 | Capellini, Giovanni; Di Gaspare, L; Evangelisti, F; Palange, E; Notargiacomo, A; Spinella, C; Lombardo, S. | |
| Metal-Ge-Si diodes for near-infrared light detection | 1-gen-1999 | Colace, L; Masini, G; Galluzzi, F; Assanto, Gaetano; Capellini, Giovanni; Di Gaspare, L; Palange, E; Evangelisti, F. | |
| Ge-Si intermixing in Ge quantum dots on Si | 1-gen-2000 | Boscherini, F; Capellini, Giovanni; Di Gaspare, L; De Seta, M; Rosei, F; Sgarlata, A; Motta, N; Mobilio, Settimio |
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