The valence density of states of Ge grown epitaxially on Si(100) is investigated as a function of thickness by yield spectroscopy and photoemission techniques. A double edge is present in the yield data for thicknesses smaller than the lattice relaxation critical thickness. Furthermore, the line-up of the Ge states to the Si valence band varies with overlayer thickness. Photoemission techniques fail to detect this behavior. The causes for the discrepancy are analyzed
Di Gaspare, L., Capellini, G., Cianci, E., Evangelisti, F. (1998). Electronic states of thin epitaxial layers of Ge on Si(100). APPLIED SURFACE SCIENCE, 123, 738-741 [10.1016/S0169-4332(97)00557-6].
Electronic states of thin epitaxial layers of Ge on Si(100)
CAPELLINI, GIOVANNI;
1998-01-01
Abstract
The valence density of states of Ge grown epitaxially on Si(100) is investigated as a function of thickness by yield spectroscopy and photoemission techniques. A double edge is present in the yield data for thicknesses smaller than the lattice relaxation critical thickness. Furthermore, the line-up of the Ge states to the Si valence band varies with overlayer thickness. Photoemission techniques fail to detect this behavior. The causes for the discrepancy are analyzedI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
