We report on Ge Schottky diodes epitaxially grown on Si(001) exhibiting a good responsivity in the near-infrared up to 1.55 mu m. The Ge layers were grown by UHV chemical vapor deposition. It was found that the photocurrent increases upon increasing the reverse bias, reaching a maximum responsivity of 0.12 A/W at 1.3 mu m for 4 V bias. The leakage current density at the saturation voltage is 1 nA/mu m(2)

Colace, L., Masini, G., Galluzzi, F., Assanto, G., Capellini, G., Di Gaspare, L., et al. (1997). Ge/Si (001) photodetector for near infrared light. DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART B, SOLID STATE PHENOMENA, 54, 55-58.

Ge/Si (001) photodetector for near infrared light

ASSANTO, GAETANO;CAPELLINI, GIOVANNI;
1997-01-01

Abstract

We report on Ge Schottky diodes epitaxially grown on Si(001) exhibiting a good responsivity in the near-infrared up to 1.55 mu m. The Ge layers were grown by UHV chemical vapor deposition. It was found that the photocurrent increases upon increasing the reverse bias, reaching a maximum responsivity of 0.12 A/W at 1.3 mu m for 4 V bias. The leakage current density at the saturation voltage is 1 nA/mu m(2)
1997
Colace, L., Masini, G., Galluzzi, F., Assanto, G., Capellini, G., Di Gaspare, L., et al. (1997). Ge/Si (001) photodetector for near infrared light. DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART B, SOLID STATE PHENOMENA, 54, 55-58.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/117716
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