The fabrication and characterization of near infrared photodetectors integrated on silicon substrates are reported on where the active layer is a thermally evaporated polycrystalline germanium. Recent results are presented in the effort to enhance the optoelectronic properties of the poly-Ge film in terms of uniformity for multiple device integration, speed and responsivity. In particular we demonstrate a 16 pixel linear array, a speed of photoresponse of about 650 ps and an enhancement of responsivity by a factor of four. The fabrication process, including substrate cleaning and preparation, requires temperatures lower than 300 degrees C being fully compatible with silicon technology. (C) 2000 Elsevier Science S.A. All rights reserved.
Masini, G., Colace, L., Galluzzi, F., Assanto, G. (2000). Advances in the field of poly-Ge on Si near infrared photodetectors. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 69, 257-260 [10.1016/S0921-5107(99)00289-5].
Advances in the field of poly-Ge on Si near infrared photodetectors
COLACE, Lorenzo;ASSANTO, GAETANO
2000-01-01
Abstract
The fabrication and characterization of near infrared photodetectors integrated on silicon substrates are reported on where the active layer is a thermally evaporated polycrystalline germanium. Recent results are presented in the effort to enhance the optoelectronic properties of the poly-Ge film in terms of uniformity for multiple device integration, speed and responsivity. In particular we demonstrate a 16 pixel linear array, a speed of photoresponse of about 650 ps and an enhancement of responsivity by a factor of four. The fabrication process, including substrate cleaning and preparation, requires temperatures lower than 300 degrees C being fully compatible with silicon technology. (C) 2000 Elsevier Science S.A. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
