A novel one-dimensional array of photodetectors for the near infrared up to 1.55 mu m is reported. The device is based on polycrystalline Ge thermally evaporated on silicon, and consists of 16 pixels at a 100 mu m pitch. A responsivity of 16 mA/W was measured at 1.3 mu m with nanosecond response time.
Colace, L., Masini, G., Galluzzi, F., Assanto, G. (1998). 16-pixel linear array of near-infrared photodetectors in polycrystalline Ge on Si. ELECTRONICS LETTERS, 34(20), 1968-1969 [10.1049/el:19981361].
16-pixel linear array of near-infrared photodetectors in polycrystalline Ge on Si
COLACE, Lorenzo;ASSANTO, GAETANO
1998-01-01
Abstract
A novel one-dimensional array of photodetectors for the near infrared up to 1.55 mu m is reported. The device is based on polycrystalline Ge thermally evaporated on silicon, and consists of 16 pixels at a 100 mu m pitch. A responsivity of 16 mA/W was measured at 1.3 mu m with nanosecond response time.File in questo prodotto:
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