The density of occupied states at the valence band edge and in the pseudo-gap is investigated by using Total yield spectroscopy. It is found that close to the valence band edge the yield spectra follow a (h-nu - E(v))3/(h-nu)2 dependence. A large increase of gap state density with increasing carbon content is also found.
DE SETA, M., Fiorini, P., Coppola, F., Evangelisti, F. (1991). DISTRIBUTION OF OCCUPIED STATES IN A-C-H AND A-SI1-XCX-H ALLOYS AS DETERMINED BY TOTAL YIELD SPECTROSCOPY. JOURNAL OF NON-CRYSTALLINE SOLIDS, 137, 867-870 [10.1016/S0022-3093(05)80257-1].
DISTRIBUTION OF OCCUPIED STATES IN A-C-H AND A-SI1-XCX-H ALLOYS AS DETERMINED BY TOTAL YIELD SPECTROSCOPY
DE SETA, Monica;
1991-01-01
Abstract
The density of occupied states at the valence band edge and in the pseudo-gap is investigated by using Total yield spectroscopy. It is found that close to the valence band edge the yield spectra follow a (h-nu - E(v))3/(h-nu)2 dependence. A large increase of gap state density with increasing carbon content is also found.File in questo prodotto:
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