We precisely determine the contraction of AlAs in multilayer optical waveguides, associated with selective oxidation of AlAs/GaAs epitaxial heterostructures. The average thickness of each layer was determined via x-ray reflectometry before and after oxidation, yielding an induced shrinkage of 11.4%+/-0.7% normal to the stack. The waveguide refractive indices were evaluated via modal-index measurements in the near-infrared. The achieved accuracy is compatible with form-birefringent phase matching in AlGaAs guided-wave frequency converters. (C) 2003 American Institute of Physics.

Durand, O., Wyckzisk, F., Olivier, J., Magis, M., Galtier, P., De Rossi, A., et al. (2003). Contraction of aluminum oxide thin layers in optical heterostructures. APPLIED PHYSICS LETTERS, 83(13), 2554-2556 [10.1063/1.1612893].

Contraction of aluminum oxide thin layers in optical heterostructures

ASSANTO, GAETANO
2003-01-01

Abstract

We precisely determine the contraction of AlAs in multilayer optical waveguides, associated with selective oxidation of AlAs/GaAs epitaxial heterostructures. The average thickness of each layer was determined via x-ray reflectometry before and after oxidation, yielding an induced shrinkage of 11.4%+/-0.7% normal to the stack. The waveguide refractive indices were evaluated via modal-index measurements in the near-infrared. The achieved accuracy is compatible with form-birefringent phase matching in AlGaAs guided-wave frequency converters. (C) 2003 American Institute of Physics.
2003
Durand, O., Wyckzisk, F., Olivier, J., Magis, M., Galtier, P., De Rossi, A., et al. (2003). Contraction of aluminum oxide thin layers in optical heterostructures. APPLIED PHYSICS LETTERS, 83(13), 2554-2556 [10.1063/1.1612893].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/121439
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