Valence band photoemission has been carried out on Ge(100) from below room temperature to 1173 K. The c(4 x 2) --> 2 x 1 phase transition is accompanied by the shift of a back bond derived surface state. The high temperature 2 x 1-->1 x 1 transition and a further transition at similar to 1075 K are evident as discontinuities in the emission intensity at the Fermi level and in the attenuation of a bulk and a surface electronic state. (C) 1998 Elsevier Science B.V. All rights reserved.

Laine, A.d., DE SETA, M., Cepek, C., Vandre, S., Goldoni, A., Franco, N., et al. (1998). Surface phase transitions of Ge(100) studied via valence band photoemission. SURFACE SCIENCE, 402(1-3), 871-874 [10.1016/S0039-6028(97)01070-4].

Surface phase transitions of Ge(100) studied via valence band photoemission

DE SETA, Monica;
1998-01-01

Abstract

Valence band photoemission has been carried out on Ge(100) from below room temperature to 1173 K. The c(4 x 2) --> 2 x 1 phase transition is accompanied by the shift of a back bond derived surface state. The high temperature 2 x 1-->1 x 1 transition and a further transition at similar to 1075 K are evident as discontinuities in the emission intensity at the Fermi level and in the attenuation of a bulk and a surface electronic state. (C) 1998 Elsevier Science B.V. All rights reserved.
1998
Laine, A.d., DE SETA, M., Cepek, C., Vandre, S., Goldoni, A., Franco, N., et al. (1998). Surface phase transitions of Ge(100) studied via valence band photoemission. SURFACE SCIENCE, 402(1-3), 871-874 [10.1016/S0039-6028(97)01070-4].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/124905
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