We have analyzed the strain distribution and the photoluminescence in Ge microstructures fabricated by means of a Si-CMOS compatible method. The tensile strain in the Ge microstructures is obtained by using a SiN stressor layer. Different shapes of microstructure, allowing the Ge layers to freely expand into one, two, or three dimensions, resulted in different strain distribution profiles. Maximal equivalent biaxial tensile strain values up to ~0.8% have been measured. Room temperature photoluminescence emission has been observed and attributed to direct-band gap recombination spectrally shifted by tensile strain
Capellini, G., Kozlowski, G., Yamamoto, Y., Lisker, M., Wenger, C., Niu, G., et al. (2013). Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach. JOURNAL OF APPLIED PHYSICS, 113 [10.1063/1.4772781].
Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach
CAPELLINI, GIOVANNI;
2013-01-01
Abstract
We have analyzed the strain distribution and the photoluminescence in Ge microstructures fabricated by means of a Si-CMOS compatible method. The tensile strain in the Ge microstructures is obtained by using a SiN stressor layer. Different shapes of microstructure, allowing the Ge layers to freely expand into one, two, or three dimensions, resulted in different strain distribution profiles. Maximal equivalent biaxial tensile strain values up to ~0.8% have been measured. Room temperature photoluminescence emission has been observed and attributed to direct-band gap recombination spectrally shifted by tensile strainI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
