Benvenuti nell'Anagrafe della Ricerca d'Ateneo
La valutazione delle attività di ricerca che si svolgono nelle università ha assunto un'importanza rilevante sia per l'intero sistema universitario sia all'interno di ogni singolo ateneo. Roma Tre si è quindi dotata di idonei strumenti informativi in grado di supportare al meglio le azioni di monitoraggio e di valutazione delle attività di ricerca svolte nei propri dipartimentied ha realizzato una Anagrafe della Ricerca di Ateneo.
EnglishWe analyze the linewidth of intersubband absorption features observed in n-type s-Ge/Ge0.82Si0.18 multiquantum wells grown on Si(001) substrates. Supported by a thorough theoretical modeling, we discuss the role on the line broadening of electron scattering due to interface roughness, spatial distribution and density of ionized donors, phonons, alloy disorder, and extended defects. To this aim, the absorption spectra of a set of samples featuring different well widths and doping profiles are measured obtaining a very good agreement with the theoretical results. We demonstrate values of the half width at half maximum of the E-0 -> E-1 absorption peak as small as 2 meV. Our analysis suggests that the coherence time of electron wave functions in n-doped Ge/SiGe quantum wells is not yet limited by intrinsic scattering mechanisms up to room temperature, opening new perspectives for the quantum design of silicon-based light emitting devices.
Virgilio M, Sabbagh D, Ortolani M, Di Gaspare L, Capellini G, & De Seta M (2014). Physical mechanisms of intersubband-absorption linewidth broadening in s-Ge/SiGe quantum wells. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 90(15).
| Titolo: | Physical mechanisms of intersubband-absorption linewidth broadening in s-Ge/SiGe quantum wells |
| Autori: | |
| Data di pubblicazione: | 2014 |
| Rivista: | |
| Citazione: | Virgilio M, Sabbagh D, Ortolani M, Di Gaspare L, Capellini G, & De Seta M (2014). Physical mechanisms of intersubband-absorption linewidth broadening in s-Ge/SiGe quantum wells. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 90(15). |
| Abstract: | We analyze the linewidth of intersubband absorption features observed in n-type s-Ge/Ge0.82Si0.18 multiquantum wells grown on Si(001) substrates. Supported by a thorough theoretical modeling, we discuss the role on the line broadening of electron scattering due to interface roughness, spatial distribution and density of ionized donors, phonons, alloy disorder, and extended defects. To this aim, the absorption spectra of a set of samples featuring different well widths and doping profiles are measured obtaining a very good agreement with the theoretical results. We demonstrate values of the half width at half maximum of the E-0 -> E-1 absorption peak as small as 2 meV. Our analysis suggests that the coherence time of electron wave functions in n-doped Ge/SiGe quantum wells is not yet limited by intrinsic scattering mechanisms up to room temperature, opening new perspectives for the quantum design of silicon-based light emitting devices. |
| Handle: | http://hdl.handle.net/11590/134943 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
File in questo prodotto:
Copyright © 2020