FexAg100−x granular thin films, being 20<x<70, were prepared by pulsed laser deposition. The thermal evolution of the electric resistance shows a dramatic drop in the range of 200<T<300 K, completely reversible with temperature and associated to a current switching between the granular thin film and its Si substrate. High resolution transmission electron microscopy measurements have revealed an amorphous interface between the thin film and the substrate, and x-ray absorption spectroscopy studies have demonstrated an electronic localization associated to the Fe atoms in this interface, which is intrinsically responsible for the current switching.

J., A., M. L., F.G., G., S., J. M., B., A., S., I., O., et al. (2009). Influence of the interface on the electronic channel switching of a Fe–Ag thin film on a Si substrate. APPLIED PHYSICS LETTERS, 95, 082103 [10.1063/1.3205124].

Influence of the interface on the electronic channel switching of a Fe–Ag thin film on a Si substrate

MENEGHINI, CARLO;
2009-01-01

Abstract

FexAg100−x granular thin films, being 20
2009
J., A., M. L., F.G., G., S., J. M., B., A., S., I., O., et al. (2009). Influence of the interface on the electronic channel switching of a Fe–Ag thin film on a Si substrate. APPLIED PHYSICS LETTERS, 95, 082103 [10.1063/1.3205124].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/146486
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