Laser treatment of amorphous silicon oxide films resulted in the formation of nanocrystalline silicon grains connected along the laser treated trace. The ac response has been analyzed at different temperatures in a wide frequency range. The real admittance probed along the laser trace showed decreasing values after an initial constant conductance when the frequency is increased; this trend is reminiscent of an inductive behavior. Therefore, the whole impedance figure addressed the probed material as a Debye-like single time constant homogeneous system with the full width at half maximum corresponding to the expected 1.14 decades with evidence of resistive losses only.

Conte, G., FELICIANGELI M., C., Rossi, M.C. (2006). Impedance of nanometer sized silicon structures. APPLIED PHYSICS LETTERS, 89, 22118-22120 [10.1063/1.2221397].

Impedance of nanometer sized silicon structures

CONTE, Gennaro;ROSSI, Maria Cristina
2006-01-01

Abstract

Laser treatment of amorphous silicon oxide films resulted in the formation of nanocrystalline silicon grains connected along the laser treated trace. The ac response has been analyzed at different temperatures in a wide frequency range. The real admittance probed along the laser trace showed decreasing values after an initial constant conductance when the frequency is increased; this trend is reminiscent of an inductive behavior. Therefore, the whole impedance figure addressed the probed material as a Debye-like single time constant homogeneous system with the full width at half maximum corresponding to the expected 1.14 decades with evidence of resistive losses only.
2006
Conte, G., FELICIANGELI M., C., Rossi, M.C. (2006). Impedance of nanometer sized silicon structures. APPLIED PHYSICS LETTERS, 89, 22118-22120 [10.1063/1.2221397].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/147455
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