Using differential optical absorption spectroscopy of germanium thin films epitaxially grown on silicon, we accurately evaluate the near-infrared absorption versus wavelength and temperature. The results allow for optimized design and realization of Ge-on-Si photodetectors. (C) 2008 American Institute of Physics.

Sorianello, V., Perna, A., Colace, L., Assanto, G., Luan, H.c., Kimerling, L.c. (2008). Near-infrared absorption of germanium thin films on silicon. APPLIED PHYSICS LETTERS, 93(11) [10.1063/1.2987999].

Near-infrared absorption of germanium thin films on silicon

ASSANTO, GAETANO;
2008-01-01

Abstract

Using differential optical absorption spectroscopy of germanium thin films epitaxially grown on silicon, we accurately evaluate the near-infrared absorption versus wavelength and temperature. The results allow for optimized design and realization of Ge-on-Si photodetectors. (C) 2008 American Institute of Physics.
2008
Sorianello, V., Perna, A., Colace, L., Assanto, G., Luan, H.c., Kimerling, L.c. (2008). Near-infrared absorption of germanium thin films on silicon. APPLIED PHYSICS LETTERS, 93(11) [10.1063/1.2987999].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/149068
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