We demonstrate novel near-infrared waveguide photodetectors in polycrystalline germanium deposited on silicon-on-insulator at low temperatures. We present the design, fabrication, and characterization of two photodiodes and their comparison. Without optimization, at 1.55 mu m, we measured wall-plug and effective responsivities as high as 30 mA/W and in excess of 150 mA/W, respectively.
Colace, L., Masini, G., Altieri, A., Assanto, G. (2006). Waveguide photodetectors for the near-infrared in polycrystalline germanium on silicon. IEEE PHOTONICS TECHNOLOGY LETTERS, 18(9-12), 1094-1096 [10.1109/LPT.2006.873964].
Waveguide photodetectors for the near-infrared in polycrystalline germanium on silicon
COLACE, Lorenzo;ASSANTO, GAETANO
2006-01-01
Abstract
We demonstrate novel near-infrared waveguide photodetectors in polycrystalline germanium deposited on silicon-on-insulator at low temperatures. We present the design, fabrication, and characterization of two photodiodes and their comparison. Without optimization, at 1.55 mu m, we measured wall-plug and effective responsivities as high as 30 mA/W and in excess of 150 mA/W, respectively.File in questo prodotto:
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