Submicron gate-length metal-semiconductor field effect transistors (MESFETs) were fabricated on hydrogen-terminated-large grain polycrystalline diamond. Devices showed high drain-source current (140 mA/mm) and large transconductance values (50 ms/mm), with a cut off frequency ft=10 GHz and a maximum oscillation frequency, fmax, up to 35 GHz. These values suggest device microwave operation in the k-band.

Calvani, P., Corsaro, A., Sinisi, F., Rossi, M.C., Conte, G., Carta, S., et al. (2009). Diamond MESFET technology development for microwave integrated circuits. In Microwave Integrated Circuits Conference, 2009. EuMIC 2009 (pp.148-151).

Diamond MESFET technology development for microwave integrated circuits

ROSSI, Maria Cristina;CONTE, Gennaro
2009-01-01

Abstract

Submicron gate-length metal-semiconductor field effect transistors (MESFETs) were fabricated on hydrogen-terminated-large grain polycrystalline diamond. Devices showed high drain-source current (140 mA/mm) and large transconductance values (50 ms/mm), with a cut off frequency ft=10 GHz and a maximum oscillation frequency, fmax, up to 35 GHz. These values suggest device microwave operation in the k-band.
2009
Calvani, P., Corsaro, A., Sinisi, F., Rossi, M.C., Conte, G., Carta, S., et al. (2009). Diamond MESFET technology development for microwave integrated circuits. In Microwave Integrated Circuits Conference, 2009. EuMIC 2009 (pp.148-151).
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/185412
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