High sensitivity photodetectors based on PbS colloidal quantum dots have been demonstrated by several research groups in the last years with performance comparable to commercial IIIâV semiconductor devices. Nevertheless, investigation of the noise performance of such new photodetectors is still lacking. Here we report on the characterization of PbS colloidal quantum dot near infrared photoconductors including a preliminary analysis of noise power spectra. Devices have been characterized focusing on the low frequency regime (up to 10 kHz) investigating the noise dependence on the voltage bias.
Colace, L., De Iacovo, A., Venettacci, C. (2017). PbS Colloidal Quantum Dot Near Infrared Photoconductors: DC and Noise Characterization. PHYSICA STATUS SOLIDI. C, CURRENT TOPICS IN SOLID STATE PHYSICS, 14(10) [10.1002/pssc.201700185].
PbS Colloidal Quantum Dot Near Infrared Photoconductors: DC and Noise Characterization
Colace, Lorenzo
;De Iacovo, Andrea;Venettacci, Carlo
2017-01-01
Abstract
High sensitivity photodetectors based on PbS colloidal quantum dots have been demonstrated by several research groups in the last years with performance comparable to commercial IIIâV semiconductor devices. Nevertheless, investigation of the noise performance of such new photodetectors is still lacking. Here we report on the characterization of PbS colloidal quantum dot near infrared photoconductors including a preliminary analysis of noise power spectra. Devices have been characterized focusing on the low frequency regime (up to 10 kHz) investigating the noise dependence on the voltage bias.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
