We report on the characterization of the response of windowless silicon avalanche photodiodes to electrons in the 90-900 eV energy range. The electrons were provided by a monoenergetic electron gun present in the LASEC laboratories of University of Roma Tre. We find that the avalanche photo-diode generates a current proportional to the current of electrons hitting its active surface. The gain is found to depend on the electron energy Ee, and varies from 2.147 ± 0.027 (for Ee = 90 eV) to 385.8±3.3 (for Ee = 900 eV), when operating the diode at a bias of Vapd = 350 V. This is the first time silicon avalanche photo-diodes are employed to measure electrons with Ee < 1 keV.
Apponi, A., Cavoto, G., Iannone, M., Mariani, C., Pandolfi, F., Paoloni, D., et al. (2020). Response of windowless silicon avalanche photo-diodes to electrons in the 90–900 eV range. JOURNAL OF INSTRUMENTATION, 15(11), P11015-P11015 [10.1088/1748-0221/15/11/P11015].
Response of windowless silicon avalanche photo-diodes to electrons in the 90–900 eV range
Apponi A.;Paoloni D.;Ruocco A.
2020-01-01
Abstract
We report on the characterization of the response of windowless silicon avalanche photodiodes to electrons in the 90-900 eV energy range. The electrons were provided by a monoenergetic electron gun present in the LASEC laboratories of University of Roma Tre. We find that the avalanche photo-diode generates a current proportional to the current of electrons hitting its active surface. The gain is found to depend on the electron energy Ee, and varies from 2.147 ± 0.027 (for Ee = 90 eV) to 385.8±3.3 (for Ee = 900 eV), when operating the diode at a bias of Vapd = 350 V. This is the first time silicon avalanche photo-diodes are employed to measure electrons with Ee < 1 keV.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
