We report on an epitaxial Ge-on-Si dual-band photodetector grown on a Si p-n junction, to form two photodiodes connected in a back-to-back configuration. The device responsivity can be tuned, with an external bias, to cover wavelengths within the visible and near-infrared spectral regions.
Ballabio, A., De Iacovo, A., Frigerio, J., Fabbri, A., Isella, G., Colace, L. (2021). Ge/Si electrically tunable VIS/SWIR photodetector. In 2021 IEEE 17th International Conference on Group IV Photonics (GFP) [10.1109/GFP51802.2021.9673998].
Ge/Si electrically tunable VIS/SWIR photodetector
De Iacovo, Andrea;Fabbri, Andrea;Isella, Giovanni;Colace, Lorenzo
2021-01-01
Abstract
We report on an epitaxial Ge-on-Si dual-band photodetector grown on a Si p-n junction, to form two photodiodes connected in a back-to-back configuration. The device responsivity can be tuned, with an external bias, to cover wavelengths within the visible and near-infrared spectral regions.File in questo prodotto:
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