CsPbBr3 thin films with nanocrystalline morphology were studied by using optoelectronic techniques to infer the grain boundary region in respect of the crystallite’s interior performance. Co-evaporation of purified powders or crushed Bridgman single crystals were used to deposit materials and compare recombinationmechanism and dielectric relaxation processes within them. Nanosecond photoconduction decay was observed on both materials as well as activated hopping transport. An asymmetric Debye-like peak was evaluated from impedance spectroscopy with a FWHM value, which remains constant for 1.25±0.02deca-des, addressing the presence of a tight conductivity relaxation times distribution. The evaluated activation energy, equal to 0.72±0.05 eV, similar to that estimated by DC measurements, is well smaller then that expected for an intrinsic material with exciton absorption at 2.36 eV. A simple model based on Voigt’s elements was used to model the electronic characteristics of these nanostructured materials, to discuss observed results and define the role played by grain boundaries.© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Conte, G., Somma, F., Nikl, M. (2004). Nanocrystalline CsPbBr3 thin films: a grain boundary optoelectronicstudy.
Nanocrystalline CsPbBr3 thin films: a grain boundary optoelectronicstudy
CONTE, Gennaro;SOMMA, Fabrizia;
2004-01-01
Abstract
CsPbBr3 thin films with nanocrystalline morphology were studied by using optoelectronic techniques to infer the grain boundary region in respect of the crystallite’s interior performance. Co-evaporation of purified powders or crushed Bridgman single crystals were used to deposit materials and compare recombinationmechanism and dielectric relaxation processes within them. Nanosecond photoconduction decay was observed on both materials as well as activated hopping transport. An asymmetric Debye-like peak was evaluated from impedance spectroscopy with a FWHM value, which remains constant for 1.25±0.02deca-des, addressing the presence of a tight conductivity relaxation times distribution. The evaluated activation energy, equal to 0.72±0.05 eV, similar to that estimated by DC measurements, is well smaller then that expected for an intrinsic material with exciton absorption at 2.36 eV. A simple model based on Voigt’s elements was used to model the electronic characteristics of these nanostructured materials, to discuss observed results and define the role played by grain boundaries.© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, WeinheimI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
