Angle-resolved photoemission spectroscopy reveals the presence of a two-dimensional electron gas at the surface of In2O3(111). Quantized subband states arise within a confining potential well associated with surface electron accumulation. Coupled Poisson-Schrodinger calculations suggest that downward band bending for the conduction band must be much bigger than band bending in the valence band. Surface oxygen vacancies acting as doubly ionized shallow donors are shown to provide the free electrons within this accumulation layer. Identification of the origin of electron accumulation in transparent conducting oxides has significant implications in the realization of devices based on these compounds.
Zhang, K., Egdell, R.g., Offi, F., Iacobucci, S., Petaccia, L., Gorovikov, S., et al. (2013). Microscopic Origin of Electron Accumulation in In2O3. PHYSICAL REVIEW LETTERS, 110(5) [10.1103/PhysRevLett.110.056803].
Microscopic Origin of Electron Accumulation in In2O3
OFFI, FRANCESCO;
2013-01-01
Abstract
Angle-resolved photoemission spectroscopy reveals the presence of a two-dimensional electron gas at the surface of In2O3(111). Quantized subband states arise within a confining potential well associated with surface electron accumulation. Coupled Poisson-Schrodinger calculations suggest that downward band bending for the conduction band must be much bigger than band bending in the valence band. Surface oxygen vacancies acting as doubly ionized shallow donors are shown to provide the free electrons within this accumulation layer. Identification of the origin of electron accumulation in transparent conducting oxides has significant implications in the realization of devices based on these compounds.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
