The local structure around Er3+ ions in Er+O doped silicon has been investigated by extended x-ray absorption spectroscopy. By comparing samples obtained by molecular-beam epitaxy and ion implantation a common structure comes out. Er is linked to five or six O atoms at around 2.24 Angstrom and there is a well defined Er-O-Si bond angle of 135degrees and an Er-Si separation of 3.6 Angstrom. The Er-Si distance is appreciably longer than that found in the more stable structures from ab-initio calculations and a discussion on the possible site for Er is presented.

D'Acapito, F., Mobilio, S., Scalese, S., Terrasi, A., Franz, G., Priolo, ., et al. (2004). Structure of Er-O complexes in crystalline Si. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 69, 153310-1-153310-4 [10.1103/PhysRevB.69.153310].

Structure of Er-O complexes in crystalline Si

MOBILIO, Settimio;
2004-01-01

Abstract

The local structure around Er3+ ions in Er+O doped silicon has been investigated by extended x-ray absorption spectroscopy. By comparing samples obtained by molecular-beam epitaxy and ion implantation a common structure comes out. Er is linked to five or six O atoms at around 2.24 Angstrom and there is a well defined Er-O-Si bond angle of 135degrees and an Er-Si separation of 3.6 Angstrom. The Er-Si distance is appreciably longer than that found in the more stable structures from ab-initio calculations and a discussion on the possible site for Er is presented.
2004
D'Acapito, F., Mobilio, S., Scalese, S., Terrasi, A., Franz, G., Priolo, ., et al. (2004). Structure of Er-O complexes in crystalline Si. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 69, 153310-1-153310-4 [10.1103/PhysRevB.69.153310].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/117434
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