Morphology of stain-etched porous silicon films was investigated by a non-destructive technique, based on reflectance spectrometry: dielectric function profiles were computed by spectral reflectance via a finite difference model, and porosity was deduced by the effective medium approximation. Theoretical calculations were supported by high-resolution electron microscopy observations. The relations among oxidising species concentration in the etching solution, porosity profile and surface reflectance of the films were investigated.
Sotgiu, G., L., S., M., M. (1999). On the morphology of stain etched porous silicon films. JOURNAL OF LUMINESCENCE, 80, 163-167 [10.1016/S0022-2313(98)00089-1].