The two-dimensional surface electronic band structure of H:GaAs(110) is studied by angular resolved ultraviolet photoemission spectroscopy along the XBAR'-MBAR and XBAR-MBAR symmetry lines and in the high symmetry points of the surface Brillouin zone. Three surface state bands are resolved in the first 5 eV below the upper valence band edge. A comparison with theoretical band structure calculations yields a satisfactory agreement, giving evidence of hydrogen induced GaAs(110) surface derelaxation. The clean GaAs(110) surface electronic band structure is studied comparing results with available theoretical and experimental data.
Plesanovas, A., Tarabini, A.c., Abbati, I., Kaciulis, S., Paolicelli, G., Pasquali, L., et al. (1994). VALENCE-BAND STATES OF H-GAAS(110). SURFACE SCIENCE, 307, 890-895 [10.1016/0039-6028(94)91510-5].
VALENCE-BAND STATES OF H-GAAS(110)
RUOCCO, Alessandro;
1994-01-01
Abstract
The two-dimensional surface electronic band structure of H:GaAs(110) is studied by angular resolved ultraviolet photoemission spectroscopy along the XBAR'-MBAR and XBAR-MBAR symmetry lines and in the high symmetry points of the surface Brillouin zone. Three surface state bands are resolved in the first 5 eV below the upper valence band edge. A comparison with theoretical band structure calculations yields a satisfactory agreement, giving evidence of hydrogen induced GaAs(110) surface derelaxation. The clean GaAs(110) surface electronic band structure is studied comparing results with available theoretical and experimental data.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
