Impedance spectroscopy of lightly nitrogenated ultrananocrystalline diamond films is investigated in the range 10 mHz–10 MHz at different temperatures between 115 K and 300 K. The electrical response was modeled alternatively by a series and a parallel equivalent scheme considering also the contribution of a resistance in series with the material’s response. These schemes fairly agree with experimentally observed low-frequency data, but cannot completely explain trends observed at higher frequencies. Resonance effects were indeed evidenced due, probably, to the formation of a distributed junction at the interface between the p-type nanocrystalline diamond grain and the degenerate n-type connective tissue. The role of the series resistance is discussed and a physical model is proposed to justify the resonant behavior of the quality factor.
M. FELICIANGELI, M.C. ROSSI, G. CONTE, & V. RALCHENKO (2009). Low temperature transport phenomena in lightly nitrogenated ultrananocrystalline diamond. SUPERLATTICES AND MICROSTRUCTURES, 46, 188-194 [10.1016/j.spmi.2008.12.001].
Titolo: | Low temperature transport phenomena in lightly nitrogenated ultrananocrystalline diamond | |
Autori: | ||
Data di pubblicazione: | 2009 | |
Rivista: | ||
Citazione: | M. FELICIANGELI, M.C. ROSSI, G. CONTE, & V. RALCHENKO (2009). Low temperature transport phenomena in lightly nitrogenated ultrananocrystalline diamond. SUPERLATTICES AND MICROSTRUCTURES, 46, 188-194 [10.1016/j.spmi.2008.12.001]. | |
Abstract: | Impedance spectroscopy of lightly nitrogenated ultrananocrystalline diamond films is investigated in the range 10 mHz–10 MHz at different temperatures between 115 K and 300 K. The electrical response was modeled alternatively by a series and a parallel equivalent scheme considering also the contribution of a resistance in series with the material’s response. These schemes fairly agree with experimentally observed low-frequency data, but cannot completely explain trends observed at higher frequencies. Resonance effects were indeed evidenced due, probably, to the formation of a distributed junction at the interface between the p-type nanocrystalline diamond grain and the degenerate n-type connective tissue. The role of the series resistance is discussed and a physical model is proposed to justify the resonant behavior of the quality factor. | |
Handle: | http://hdl.handle.net/11590/119677 | |
Appare nelle tipologie: | 1.1 Articolo in rivista |