Benvenuti nell'Anagrafe della Ricerca d'Ateneo
La valutazione delle attività di ricerca che si svolgono nelle università ha assunto un'importanza rilevante sia per l'intero sistema universitario sia all'interno di ogni singolo ateneo. Roma Tre si è quindi dotata di idonei strumenti informativi in grado di supportare al meglio le azioni di monitoraggio e di valutazione delle attività di ricerca svolte nei propri dipartimentied ha realizzato una Anagrafe della Ricerca di Ateneo.
EnglishImpedance spectroscopy of lightly nitrogenated ultrananocrystalline diamond films is investigated in the range 10 mHz–10 MHz at different temperatures between 115 K and 300 K. The electrical response was modeled alternatively by a series and a parallel equivalent scheme considering also the contribution of a resistance in series with the material’s response. These schemes fairly agree with experimentally observed low-frequency data, but cannot completely explain trends observed at higher frequencies. Resonance effects were indeed evidenced due, probably, to the formation of a distributed junction at the interface between the p-type nanocrystalline diamond grain and the degenerate n-type connective tissue. The role of the series resistance is discussed and a physical model is proposed to justify the resonant behavior of the quality factor.
M. FELICIANGELI, M.C. ROSSI, G. CONTE, & V. RALCHENKO (2009). Low temperature transport phenomena in lightly nitrogenated ultrananocrystalline diamond. SUPERLATTICES AND MICROSTRUCTURES, 46, 188-194.
| Titolo: | Low temperature transport phenomena in lightly nitrogenated ultrananocrystalline diamond |
| Autori: | |
| Data di pubblicazione: | 2009 |
| Rivista: | |
| Citazione: | M. FELICIANGELI, M.C. ROSSI, G. CONTE, & V. RALCHENKO (2009). Low temperature transport phenomena in lightly nitrogenated ultrananocrystalline diamond. SUPERLATTICES AND MICROSTRUCTURES, 46, 188-194. |
| Abstract: | Impedance spectroscopy of lightly nitrogenated ultrananocrystalline diamond films is investigated in the range 10 mHz–10 MHz at different temperatures between 115 K and 300 K. The electrical response was modeled alternatively by a series and a parallel equivalent scheme considering also the contribution of a resistance in series with the material’s response. These schemes fairly agree with experimentally observed low-frequency data, but cannot completely explain trends observed at higher frequencies. Resonance effects were indeed evidenced due, probably, to the formation of a distributed junction at the interface between the p-type nanocrystalline diamond grain and the degenerate n-type connective tissue. The role of the series resistance is discussed and a physical model is proposed to justify the resonant behavior of the quality factor. |
| Handle: | http://hdl.handle.net/11590/119677 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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