Impedance spectroscopy of lightly nitrogenated ultrananocrystalline diamond films is investigated in the range 10 mHz–10 MHz at different temperatures between 115 K and 300 K. The electrical response was modeled alternatively by a series and a parallel equivalent scheme considering also the contribution of a resistance in series with the material’s response. These schemes fairly agree with experimentally observed low-frequency data, but cannot completely explain trends observed at higher frequencies. Resonance effects were indeed evidenced due, probably, to the formation of a distributed junction at the interface between the p-type nanocrystalline diamond grain and the degenerate n-type connective tissue. The role of the series resistance is discussed and a physical model is proposed to justify the resonant behavior of the quality factor.
M., F., Rossi, M.C., Conte, G., V., R. (2009). Low temperature transport phenomena in lightly nitrogenated ultrananocrystalline diamond. SUPERLATTICES AND MICROSTRUCTURES, 46, 188-194 [10.1016/j.spmi.2008.12.001].
Low temperature transport phenomena in lightly nitrogenated ultrananocrystalline diamond
ROSSI, Maria Cristina;CONTE, Gennaro;
2009-01-01
Abstract
Impedance spectroscopy of lightly nitrogenated ultrananocrystalline diamond films is investigated in the range 10 mHz–10 MHz at different temperatures between 115 K and 300 K. The electrical response was modeled alternatively by a series and a parallel equivalent scheme considering also the contribution of a resistance in series with the material’s response. These schemes fairly agree with experimentally observed low-frequency data, but cannot completely explain trends observed at higher frequencies. Resonance effects were indeed evidenced due, probably, to the formation of a distributed junction at the interface between the p-type nanocrystalline diamond grain and the degenerate n-type connective tissue. The role of the series resistance is discussed and a physical model is proposed to justify the resonant behavior of the quality factor.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
