Beams of 2.0 MeV nitrogen ions, produced by a Van de Graaff generator, were used in order to create point defects in polycrystalline LiF thin films. The radiation effects were examined by optical absorption, RES, PDMS and XPS methods. The concentration of the produced F-centers exhibits a saturation behavior, but decreases for doses higher than similar to 1 x 10(16)cm(-2). A fluorine sputtering yield Y similar to 3 was determined by using RES. Moreover, XPS and PDMS techniques detected surface Li enrichment as a result of the ion bombardment. All these results denote the relevance of the sputtering in the de-coloration process of LIF thin layers.
Cremona, M., Pereira, J., Mauricio, M., Do Carmo, L., Somma, F. (1999). Sputtering and coloration process in LiF thin layers induced by MeV ion bombardment. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 149(1-4), 215-219 [10.1080/10420159908230158].
Sputtering and coloration process in LiF thin layers induced by MeV ion bombardment
SOMMA, Fabrizia
1999-01-01
Abstract
Beams of 2.0 MeV nitrogen ions, produced by a Van de Graaff generator, were used in order to create point defects in polycrystalline LiF thin films. The radiation effects were examined by optical absorption, RES, PDMS and XPS methods. The concentration of the produced F-centers exhibits a saturation behavior, but decreases for doses higher than similar to 1 x 10(16)cm(-2). A fluorine sputtering yield Y similar to 3 was determined by using RES. Moreover, XPS and PDMS techniques detected surface Li enrichment as a result of the ion bombardment. All these results denote the relevance of the sputtering in the de-coloration process of LIF thin layers.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
