We report on Ge Schottky diodes epitaxially grown on Si(001) exhibiting a good responsivity in the near-infrared up to 1.55 mu m. The Ge layers were grown by UHV chemical vapor deposition. It was found that the photocurrent increases upon increasing the reverse bias, reaching a maximum responsivity of 0.12 A/W at 1.3 mu m for 4 V bias. The leakage current density at the saturation voltage is 1 nA/mu m(2).
Colace, L., Masini, G., Galluzzi, F., Assanto, G., Capellini, G., Di Gaspare, L., et al. (1997). Ge/Si (001) photodetector for near infrared light. DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART B, SOLID STATE PHENOMENA, 54, 55-58.
Ge/Si (001) photodetector for near infrared light
COLACE, Lorenzo;ASSANTO, GAETANO;
1997-01-01
Abstract
We report on Ge Schottky diodes epitaxially grown on Si(001) exhibiting a good responsivity in the near-infrared up to 1.55 mu m. The Ge layers were grown by UHV chemical vapor deposition. It was found that the photocurrent increases upon increasing the reverse bias, reaching a maximum responsivity of 0.12 A/W at 1.3 mu m for 4 V bias. The leakage current density at the saturation voltage is 1 nA/mu m(2).File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
