Benvenuti nell'Anagrafe della Ricerca d'Ateneo
La valutazione delle attività di ricerca che si svolgono nelle università ha assunto un'importanza rilevante sia per l'intero sistema universitario sia all'interno di ogni singolo ateneo. Roma Tre si è quindi dotata di idonei strumenti informativi in grado di supportare al meglio le azioni di monitoraggio e di valutazione delle attività di ricerca svolte nei propri dipartimentied ha realizzato una Anagrafe della Ricerca di Ateneo.
EnglishWe provide a direct experimental proof and the related modeling of the role played by Si overgrowth in promoting the lateral ordering of Ge islands grown by chemical vapor deposition on Si(001). The deposition of silicon induces a shape transformation, from domes to truncated pyramids with a larger base, generating an array of closely spaced interacting islands. By modeling, we show that the resulting gradient in the chemical potential across the island should be the driving force for a selective flow of both Ge and Si atoms at the surface and, in turn, to a real motion of the dots, favoring the lateral order.
Capellini G, De Seta M, Evangelisti F, Zinovyev VA, Vastola G, Montalenti F, et al. (2006). Self-ordering of a Ge island single layer induced by Si overgrowth. PHYSICAL REVIEW LETTERS, 96(10), 106102-106102_4 [10.1103/PhysRevLett.96.106102].
| Titolo: | Self-ordering of a Ge island single layer induced by Si overgrowth | |
| Autori: | ||
| Data di pubblicazione: | 2006 | |
| Rivista: | ||
| Citazione: | Capellini G, De Seta M, Evangelisti F, Zinovyev VA, Vastola G, Montalenti F, et al. (2006). Self-ordering of a Ge island single layer induced by Si overgrowth. PHYSICAL REVIEW LETTERS, 96(10), 106102-106102_4 [10.1103/PhysRevLett.96.106102]. | |
| Abstract: | We provide a direct experimental proof and the related modeling of the role played by Si overgrowth in promoting the lateral ordering of Ge islands grown by chemical vapor deposition on Si(001). The deposition of silicon induces a shape transformation, from domes to truncated pyramids with a larger base, generating an array of closely spaced interacting islands. By modeling, we show that the resulting gradient in the chemical potential across the island should be the driving force for a selective flow of both Ge and Si atoms at the surface and, in turn, to a real motion of the dots, favoring the lateral order. | |
| Handle: | http://hdl.handle.net/11590/119919 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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