We present a comprehensive study of the photon energy dependence of the valence band photoemission yield in the prototype Mott-Hubbard oxide V(2)O(3). The analysis of our experimental results, covering an extended photon energy range (20-6000 eV) and combined with GW calculations, allows us to identify the nature of the orbitals contributing to the total spectral weight at different binding energies, and in particular to locate the V 4s states at about 8 eV binding energy. From this comparative analysis, we conclude that the intensity of the quasiparticle photoemission peak, observed close to the Fermi level in the paramagnetic metallic phase upon increasing photon energy, does not have a significant correlation with the intensity variation in the O 2p and V 3d yield, thus, confirming that bulk sensitivity is an essential requirement for the detection of this coherent low-energy excitation.

Papalazarou, E., Gatti, M., Marsi, M., Brouet, V., Iori, F., Reining, L., et al. (2009). Valence-band electronic structure of V(2)O(3): Identification of V and O bands. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 80(15), 155115 [10.1103/PhysRevB.80.155115].

Valence-band electronic structure of V(2)O(3): Identification of V and O bands

OFFI, FRANCESCO;
2009-01-01

Abstract

We present a comprehensive study of the photon energy dependence of the valence band photoemission yield in the prototype Mott-Hubbard oxide V(2)O(3). The analysis of our experimental results, covering an extended photon energy range (20-6000 eV) and combined with GW calculations, allows us to identify the nature of the orbitals contributing to the total spectral weight at different binding energies, and in particular to locate the V 4s states at about 8 eV binding energy. From this comparative analysis, we conclude that the intensity of the quasiparticle photoemission peak, observed close to the Fermi level in the paramagnetic metallic phase upon increasing photon energy, does not have a significant correlation with the intensity variation in the O 2p and V 3d yield, thus, confirming that bulk sensitivity is an essential requirement for the detection of this coherent low-energy excitation.
2009
Papalazarou, E., Gatti, M., Marsi, M., Brouet, V., Iori, F., Reining, L., et al. (2009). Valence-band electronic structure of V(2)O(3): Identification of V and O bands. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 80(15), 155115 [10.1103/PhysRevB.80.155115].
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/120382
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 24
  • ???jsp.display-item.citation.isi??? 25
social impact