Using layer transfer and wafer bonding followed by epitaxial regrowth, we design, realize, and characterize a novel generation of Germanium-on-Glass (GoG) near-infrared light sensors. In particular, we demonstrate GoG p-n junction photodetectors and GoG solar cells. In terms of performance, GoG junctions compare well with Germanium (Ge) structures on either Ge or Si. The photodiodes show a minimum dark current density of 50 mu A/cm(2) at 1 V reverse voltage and a maximum sensitivity of 280 mA/W at 1.55 mu m and 5 V bias; the solar cells exhibit conversion efficiencies as high as 2.41% and fill factors of 53%, similar to structures grown on crystalline Ge substrates.
Colace, L., Sorianello, V., Assanto, G., Fulgoni, D., Nash, L., Palmer, M. (2010). Germanium on Glass: A Novel Platform for Light-Sensing Devices. IEEE PHOTONICS JOURNAL, 2(5), 686-695 [10.1109/JPHOT.2010.2059374].
Germanium on Glass: A Novel Platform for Light-Sensing Devices
COLACE, Lorenzo;ASSANTO, GAETANO;
2010-01-01
Abstract
Using layer transfer and wafer bonding followed by epitaxial regrowth, we design, realize, and characterize a novel generation of Germanium-on-Glass (GoG) near-infrared light sensors. In particular, we demonstrate GoG p-n junction photodetectors and GoG solar cells. In terms of performance, GoG junctions compare well with Germanium (Ge) structures on either Ge or Si. The photodiodes show a minimum dark current density of 50 mu A/cm(2) at 1 V reverse voltage and a maximum sensitivity of 280 mA/W at 1.55 mu m and 5 V bias; the solar cells exhibit conversion efficiencies as high as 2.41% and fill factors of 53%, similar to structures grown on crystalline Ge substrates.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
