Ge-on-glass photodetectors is fabricated by wafer bonding and layer splitting, followed by the epitaxial growth of pn structures. The detectors exhibit a remarkably low dark current density of 50 mu A/cm(2) at 1 V reverse bias and responsivities as high as 0.33 and 0.43 A/W at 1.52 and 1.3 mu m, respectively. This approach can be readily extended to other substrates, enabling the integration of Ge on different platforms.
Colace, L., Sorianello, V., De Iacovo, A., Fulgoni, D., Nash, L., Assanto, G. (2009). Germanium-on-glass near-infrared detectors. ELECTRONICS LETTERS, 45(19), 994-995 [10.1049/el.2009.1647].
Germanium-on-glass near-infrared detectors
COLACE, Lorenzo;De Iacovo A;ASSANTO, GAETANO
2009-01-01
Abstract
Ge-on-glass photodetectors is fabricated by wafer bonding and layer splitting, followed by the epitaxial growth of pn structures. The detectors exhibit a remarkably low dark current density of 50 mu A/cm(2) at 1 V reverse bias and responsivities as high as 0.33 and 0.43 A/W at 1.52 and 1.3 mu m, respectively. This approach can be readily extended to other substrates, enabling the integration of Ge on different platforms.File in questo prodotto:
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