Benvenuti nell'Anagrafe della Ricerca d'Ateneo
La valutazione delle attività di ricerca che si svolgono nelle università ha assunto un'importanza rilevante sia per l'intero sistema universitario sia all'interno di ogni singolo ateneo. Roma Tre si è quindi dotata di idonei strumenti informativi in grado di supportare al meglio le azioni di monitoraggio e di valutazione delle attività di ricerca svolte nei propri dipartimentied ha realizzato una Anagrafe della Ricerca di Ateneo.
EnglishWe investigate the temperature dependence of p-i-n photodetectors realized in germanium on silicon. The dark current increases by a factor 1.6-1.9 every 10 degrees C and is typically dominated by generation in the space charge region, with diffusion contributing in the best samples. The near infrared (NIR) responsivity decreases with temperature in devices with a large defect-density, but is more stable in high-quality photodiodes. These findings provide a relevant insight on the design of Ge-on-Si NIR detectors to be operated above room temperature. (C) 2008 Elsevier B.V. All rights reserved.
Balbi M, Sorianello V, Colace L, & Assanto G (2009). Analysis of temperature dependence of Ge-on-Si p-i-n photodetectors. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 41(6), 1086-1089 [10.1016/j.physe.2008.08.015].
| Titolo: | Analysis of temperature dependence of Ge-on-Si p-i-n photodetectors | |
| Autori: | ||
| Data di pubblicazione: | 2009 | |
| Rivista: | ||
| Citazione: | Balbi M, Sorianello V, Colace L, & Assanto G (2009). Analysis of temperature dependence of Ge-on-Si p-i-n photodetectors. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 41(6), 1086-1089 [10.1016/j.physe.2008.08.015]. | |
| Abstract: | We investigate the temperature dependence of p-i-n photodetectors realized in germanium on silicon. The dark current increases by a factor 1.6-1.9 every 10 degrees C and is typically dominated by generation in the space charge region, with diffusion contributing in the best samples. The near infrared (NIR) responsivity decreases with temperature in devices with a large defect-density, but is more stable in high-quality photodiodes. These findings provide a relevant insight on the design of Ge-on-Si NIR detectors to be operated above room temperature. (C) 2008 Elsevier B.V. All rights reserved. | |
| Handle: | http://hdl.handle.net/11590/120429 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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