We investigate the temperature dependence of p-i-n photodetectors realized in germanium on silicon. The dark current increases by a factor 1.6-1.9 every 10 degrees C and is typically dominated by generation in the space charge region, with diffusion contributing in the best samples. The near infrared (NIR) responsivity decreases with temperature in devices with a large defect-density, but is more stable in high-quality photodiodes. These findings provide a relevant insight on the design of Ge-on-Si NIR detectors to be operated above room temperature. (C) 2008 Elsevier B.V. All rights reserved.

Balbi M, Sorianello V, Colace L, & Assanto G (2009). Analysis of temperature dependence of Ge-on-Si p-i-n photodetectors. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 41(6), 1086-1089 [10.1016/j.physe.2008.08.015].

Analysis of temperature dependence of Ge-on-Si p-i-n photodetectors

COLACE, Lorenzo;
2009

Abstract

We investigate the temperature dependence of p-i-n photodetectors realized in germanium on silicon. The dark current increases by a factor 1.6-1.9 every 10 degrees C and is typically dominated by generation in the space charge region, with diffusion contributing in the best samples. The near infrared (NIR) responsivity decreases with temperature in devices with a large defect-density, but is more stable in high-quality photodiodes. These findings provide a relevant insight on the design of Ge-on-Si NIR detectors to be operated above room temperature. (C) 2008 Elsevier B.V. All rights reserved.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11590/120429
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