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La valutazione delle attività di ricerca che si svolgono nelle università ha assunto un'importanza rilevante sia per l'intero sistema universitario sia all'interno di ogni singolo ateneo. Roma Tre si è quindi dotata di idonei strumenti informativi in grado di supportare al meglio le azioni di monitoraggio e di valutazione delle attività di ricerca svolte nei propri dipartimentied ha realizzato una Anagrafe della Ricerca di Ateneo.
EnglishWe investigate the temperature dependence of p-i-n photodetectors realized in germanium on silicon. The dark current increases by a factor 1.6-1.9 every 10 degrees C and is typically dominated by generation in the space charge region, with diffusion contributing in the best samples. The near infrared (NIR) responsivity decreases with temperature in devices with a large defect-density, but is more stable in high-quality photodiodes. These findings provide a relevant insight on the design of Ge-on-Si NIR detectors to be operated above room temperature. (C) 2008 Elsevier B.V. All rights reserved.
Balbi M, Sorianello V, Colace L, & Assanto G (2009). Analysis of temperature dependence of Ge-on-Si p-i-n photodetectors. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 41(6), 1086-1089.
| Titolo: | Analysis of temperature dependence of Ge-on-Si p-i-n photodetectors | |
| Autori: | ||
| Data di pubblicazione: | 2009 | |
| Rivista: | ||
| Citazione: | Balbi M, Sorianello V, Colace L, & Assanto G (2009). Analysis of temperature dependence of Ge-on-Si p-i-n photodetectors. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 41(6), 1086-1089. | |
| Abstract: | We investigate the temperature dependence of p-i-n photodetectors realized in germanium on silicon. The dark current increases by a factor 1.6-1.9 every 10 degrees C and is typically dominated by generation in the space charge region, with diffusion contributing in the best samples. The near infrared (NIR) responsivity decreases with temperature in devices with a large defect-density, but is more stable in high-quality photodiodes. These findings provide a relevant insight on the design of Ge-on-Si NIR detectors to be operated above room temperature. (C) 2008 Elsevier B.V. All rights reserved. | |
| Handle: | http://hdl.handle.net/11590/120429 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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