We investigate and characterize p-i-n near-infrared photodiodes fabricated in Ge-on-Si by reduced-pressure chemical vapor deposition, a technology compatible with silicon processing. The detectors exhibit remarkably low dark current densities of 1mA/cm(2) at unity reverse bias and high responsivities of 200 mA/W at 1.55 mu m. We evaluated their small-signal resistance, capacitance, and bandwidth as well as eye-diagrams at 2.5 and 10 Gbit/s.

Colace, L., Assanto, G., Fulgoni, D., Nash, L. (2008). Near-Infrared p-i-n Ge-on-Si Photodiodes for Silicon Integrated Receivers. JOURNAL OF LIGHTWAVE TECHNOLOGY, 26(13-16), 2954-2959 [10.1109/JLT.2008.925032].

Near-Infrared p-i-n Ge-on-Si Photodiodes for Silicon Integrated Receivers

COLACE, Lorenzo;ASSANTO, GAETANO;
2008-01-01

Abstract

We investigate and characterize p-i-n near-infrared photodiodes fabricated in Ge-on-Si by reduced-pressure chemical vapor deposition, a technology compatible with silicon processing. The detectors exhibit remarkably low dark current densities of 1mA/cm(2) at unity reverse bias and high responsivities of 200 mA/W at 1.55 mu m. We evaluated their small-signal resistance, capacitance, and bandwidth as well as eye-diagrams at 2.5 and 10 Gbit/s.
2008
Colace, L., Assanto, G., Fulgoni, D., Nash, L. (2008). Near-Infrared p-i-n Ge-on-Si Photodiodes for Silicon Integrated Receivers. JOURNAL OF LIGHTWAVE TECHNOLOGY, 26(13-16), 2954-2959 [10.1109/JLT.2008.925032].
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/120430
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 28
  • ???jsp.display-item.citation.isi??? 28
social impact