We investigate and characterize p-i-n near-infrared photodiodes fabricated in Ge-on-Si by reduced-pressure chemical vapor deposition, a technology compatible with silicon processing. The detectors exhibit remarkably low dark current densities of 1mA/cm(2) at unity reverse bias and high responsivities of 200 mA/W at 1.55 mu m. We evaluated their small-signal resistance, capacitance, and bandwidth as well as eye-diagrams at 2.5 and 10 Gbit/s.
Colace L, Assanto G, Fulgoni D, & Nash L (2008). Near-Infrared p-i-n Ge-on-Si Photodiodes for Silicon Integrated Receivers. JOURNAL OF LIGHTWAVE TECHNOLOGY, 26(13-16), 2954-2959 [10.1109/JLT.2008.925032].
Titolo: | Near-Infrared p-i-n Ge-on-Si Photodiodes for Silicon Integrated Receivers | |
Autori: | ||
Data di pubblicazione: | 2008 | |
Rivista: | ||
Citazione: | Colace L, Assanto G, Fulgoni D, & Nash L (2008). Near-Infrared p-i-n Ge-on-Si Photodiodes for Silicon Integrated Receivers. JOURNAL OF LIGHTWAVE TECHNOLOGY, 26(13-16), 2954-2959 [10.1109/JLT.2008.925032]. | |
Abstract: | We investigate and characterize p-i-n near-infrared photodiodes fabricated in Ge-on-Si by reduced-pressure chemical vapor deposition, a technology compatible with silicon processing. The detectors exhibit remarkably low dark current densities of 1mA/cm(2) at unity reverse bias and high responsivities of 200 mA/W at 1.55 mu m. We evaluated their small-signal resistance, capacitance, and bandwidth as well as eye-diagrams at 2.5 and 10 Gbit/s. | |
Handle: | http://hdl.handle.net/11590/120430 | |
Appare nelle tipologie: | 1.1 Articolo in rivista |