We report on fast p-i-n photodetectors operating in the near infrared and realized in pure germanium on silicon. The diodes were fabricated by chemical vapor deposition at 600 degrees C without affecting the crystal quality and allowing the integration with standard silicon processes. We demonstrate responsivities of 0.4 and 0.2 A/W at 1.3 and 1.55 mu m, respectively, as well as operation at 10 Gbit/s. (c) 2006 American Institute of Physics.
Colace, L., Balbi, M., Masini, G., Assanto, G., Luan, H.c., Kimerling, L.c. (2006). Ge on Si p-i-n photodiodes operating at 10 Gbit/s. APPLIED PHYSICS LETTERS, 88(10) [10.1063/1.2182110].
Ge on Si p-i-n photodiodes operating at 10 Gbit/s
COLACE, Lorenzo;ASSANTO, GAETANO;
2006-01-01
Abstract
We report on fast p-i-n photodetectors operating in the near infrared and realized in pure germanium on silicon. The diodes were fabricated by chemical vapor deposition at 600 degrees C without affecting the crystal quality and allowing the integration with standard silicon processes. We demonstrate responsivities of 0.4 and 0.2 A/W at 1.3 and 1.55 mu m, respectively, as well as operation at 10 Gbit/s. (c) 2006 American Institute of Physics.File in questo prodotto:
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