Novel Ge on silicon pin photodetectors have been fabricated and characterised. The devices, designed by considering the defects at the Ge/Si interface, exhibit overall performances that are among the best available, with short-circuit responsivities as high as 0.4A/W at 1.3 mum, dark currents below 20mA/cm(2) and response times shorter than 800ps.
Utilizza questo identificativo per citare o creare un link a questo documento:
http://hdl.handle.net/11590/120436
Titolo: | Germanium on silicon pin photodiodes for the near infrared |
Autori: | |
Data di pubblicazione: | 2000 |
Rivista: | |
Abstract: | Novel Ge on silicon pin photodetectors have been fabricated and characterised. The devices, designed by considering the defects at the Ge/Si interface, exhibit overall performances that are among the best available, with short-circuit responsivities as high as 0.4A/W at 1.3 mum, dark currents below 20mA/cm(2) and response times shorter than 800ps. |
Handle: | http://hdl.handle.net/11590/120436 |
Appare nelle tipologie: | 1.1 Articolo in rivista |
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