Novel Ge on silicon pin photodetectors have been fabricated and characterised. The devices, designed by considering the defects at the Ge/Si interface, exhibit overall performances that are among the best available, with short-circuit responsivities as high as 0.4A/W at 1.3 mum, dark currents below 20mA/cm(2) and response times shorter than 800ps.

Masini, G., Colace, L., Assanto, G., Luan, H.c., Kimerling, L.c. (2000). Germanium on silicon pin photodiodes for the near infrared. ELECTRONICS LETTERS, 36(25), 2095-2096 [10.1049/el:20001448].

Germanium on silicon pin photodiodes for the near infrared

COLACE, Lorenzo;ASSANTO, GAETANO;
2000-01-01

Abstract

Novel Ge on silicon pin photodetectors have been fabricated and characterised. The devices, designed by considering the defects at the Ge/Si interface, exhibit overall performances that are among the best available, with short-circuit responsivities as high as 0.4A/W at 1.3 mum, dark currents below 20mA/cm(2) and response times shorter than 800ps.
2000
Masini, G., Colace, L., Assanto, G., Luan, H.c., Kimerling, L.c. (2000). Germanium on silicon pin photodiodes for the near infrared. ELECTRONICS LETTERS, 36(25), 2095-2096 [10.1049/el:20001448].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/120436
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