Using a guided wave configuration, we demonstrate a novel polyGe-on-Si heterostructure photodetector realized on a silicon-on-insulator by a low deposition temperature process. Without further detector optimization, at 1.55 mu m we measured wall-plug responsivities as high as 15 mA/W with an effective responsivity in excess of 300 mA/W. Device operation was demonstrated up to 2.5 Gbit/s. (C) 2005 American Institute of Physics.
Colace, L., Masini, G., Assanto, G. (2005). Guided-wave near-infrared detector in polycrystalline germanium on silicon. APPLIED PHYSICS LETTERS, 87(20) [10.1063/1.2131175].
Guided-wave near-infrared detector in polycrystalline germanium on silicon
COLACE, Lorenzo;ASSANTO, GAETANO
2005-01-01
Abstract
Using a guided wave configuration, we demonstrate a novel polyGe-on-Si heterostructure photodetector realized on a silicon-on-insulator by a low deposition temperature process. Without further detector optimization, at 1.55 mu m we measured wall-plug responsivities as high as 15 mA/W with an effective responsivity in excess of 300 mA/W. Device operation was demonstrated up to 2.5 Gbit/s. (C) 2005 American Institute of Physics.File in questo prodotto:
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