We describe a linear array of Ge-Si heterojunction photodiodes monolithically integrated on a complementary metaloxide-semiconductor (CMOS) integrated circuit for detection and imaging in the near infrared. Detectors are realized by thermal evaporation of Ge films at the end of the standard CMOS process on substrates held at low temperature (300 degreesC). Each of the 64 detectors is connected to a front-end stage for photocurrent integration and analog-to-digital conversion.
Masini, G., Cencelli, V., Colace, L., de Notaristefani, F., Assanto, G. (2004). Linear array of Si-Ge heterojunction photodetectors monolithically integrated with silicon CMOS readout electronics. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 10(4), 811-815 [10.1109/JSTQE.2004.833970].
Linear array of Si-Ge heterojunction photodetectors monolithically integrated with silicon CMOS readout electronics
COLACE, Lorenzo;ASSANTO, GAETANO
2004-01-01
Abstract
We describe a linear array of Ge-Si heterojunction photodiodes monolithically integrated on a complementary metaloxide-semiconductor (CMOS) integrated circuit for detection and imaging in the near infrared. Detectors are realized by thermal evaporation of Ge films at the end of the standard CMOS process on substrates held at low temperature (300 degreesC). Each of the 64 detectors is connected to a front-end stage for photocurrent integration and analog-to-digital conversion.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
