We investigate the temperature dependence of germanium on silicon p-i-n photodetectors in terms of both dark current density and near-infrared responsivity. The dark current increases by nearly a factor 1.6 every 10 degrees C, consistently with carrier generation in the space charge region. The responsivity has a complex trend, its temperature variation depending on wavelength and on the germanium quality. Detectors with a large defect density in the active layer exhibit a reduced responsivity as the temperature increases.

Colace, L., Balbi, M., Sorianello, V., Assanto, G. (2008). Temperature-Dependence of Ge on Si p-i-n Photodetectors. JOURNAL OF LIGHTWAVE TECHNOLOGY, 26(13-16), 2211-2214 [10.1109/JLT.2008.917080].

Temperature-Dependence of Ge on Si p-i-n Photodetectors

ASSANTO, GAETANO
2008-01-01

Abstract

We investigate the temperature dependence of germanium on silicon p-i-n photodetectors in terms of both dark current density and near-infrared responsivity. The dark current increases by nearly a factor 1.6 every 10 degrees C, consistently with carrier generation in the space charge region. The responsivity has a complex trend, its temperature variation depending on wavelength and on the germanium quality. Detectors with a large defect density in the active layer exhibit a reduced responsivity as the temperature increases.
2008
Colace, L., Balbi, M., Sorianello, V., Assanto, G. (2008). Temperature-Dependence of Ge on Si p-i-n Photodetectors. JOURNAL OF LIGHTWAVE TECHNOLOGY, 26(13-16), 2211-2214 [10.1109/JLT.2008.917080].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/121552
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