We report oil novel pn Ge photodetectors fabricated oil glass The fabrication consists of wafer bonding and layer splitting. followed by a low-temperature epitaxial growth of Ge The photodiodes are characterized in terms of dark current and responsivity, and their performance compared with devices realized on either Ge or Si The minimum current density is 50 mu A/cm(2) at 1 V reverse bias. the responsivity is 0.2 A/W in the photovoltaic mode, with a maximum of 0 28 A/W at 1.55 micron at a reverse voltage of 5 V (C) 2009 Elsevier

Sorianello, V., De Iacovo, A., Colace, L., Assanto, G., Fulgoni, D., Nash, L., et al. (2010). Germanium on insulator near-infrared photodetectors fabricated by layer transfer. THIN SOLID FILMS, 518(9), 2501-2504 [10.1016/j.tsf.2009.09.134].

Germanium on insulator near-infrared photodetectors fabricated by layer transfer

De Iacovo A;Colace L;ASSANTO, GAETANO;
2010-01-01

Abstract

We report oil novel pn Ge photodetectors fabricated oil glass The fabrication consists of wafer bonding and layer splitting. followed by a low-temperature epitaxial growth of Ge The photodiodes are characterized in terms of dark current and responsivity, and their performance compared with devices realized on either Ge or Si The minimum current density is 50 mu A/cm(2) at 1 V reverse bias. the responsivity is 0.2 A/W in the photovoltaic mode, with a maximum of 0 28 A/W at 1.55 micron at a reverse voltage of 5 V (C) 2009 Elsevier
2010
Sorianello, V., De Iacovo, A., Colace, L., Assanto, G., Fulgoni, D., Nash, L., et al. (2010). Germanium on insulator near-infrared photodetectors fabricated by layer transfer. THIN SOLID FILMS, 518(9), 2501-2504 [10.1016/j.tsf.2009.09.134].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/124961
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