We report oil novel pn Ge photodetectors fabricated oil glass The fabrication consists of wafer bonding and layer splitting. followed by a low-temperature epitaxial growth of Ge The photodiodes are characterized in terms of dark current and responsivity, and their performance compared with devices realized on either Ge or Si The minimum current density is 50 mu A/cm(2) at 1 V reverse bias. the responsivity is 0.2 A/W in the photovoltaic mode, with a maximum of 0 28 A/W at 1.55 micron at a reverse voltage of 5 V (C) 2009 Elsevier
Sorianello, V., De Iacovo, A., Colace, L., Assanto, G., Fulgoni, D., Nash, L., et al. (2010). Germanium on insulator near-infrared photodetectors fabricated by layer transfer. THIN SOLID FILMS, 518(9), 2501-2504 [10.1016/j.tsf.2009.09.134].
Germanium on insulator near-infrared photodetectors fabricated by layer transfer
De Iacovo A;Colace L;ASSANTO, GAETANO;
2010-01-01
Abstract
We report oil novel pn Ge photodetectors fabricated oil glass The fabrication consists of wafer bonding and layer splitting. followed by a low-temperature epitaxial growth of Ge The photodiodes are characterized in terms of dark current and responsivity, and their performance compared with devices realized on either Ge or Si The minimum current density is 50 mu A/cm(2) at 1 V reverse bias. the responsivity is 0.2 A/W in the photovoltaic mode, with a maximum of 0 28 A/W at 1.55 micron at a reverse voltage of 5 V (C) 2009 ElsevierI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
