Hydrogenated carbon-silicon alloys with carbon fraction X(C) between 0.2 and 0.8 have been deposited and characterized. For X(C) less-than-or-equal-to 0.5 it is shown that Si/SiC phases whose electronic properties can be optimized by using an H-2 dilution higher than 90% and a substrate temperature T(d) almost-equal-to 300-degrees-C are preferentially deposited. For X(C) > 0.5 the deposited material contains polymer-like phases which are responsible for high optical transparency and poor electronic properties.
DECESARE G, GALLUZZI F, GUATTARI G, LEO G, VINCENZONI R, & BEMPORAD E (1993). STRUCTURAL, OPTICAL AND ELECTRONIC-PROPERTIES OF WIDE-BAND GAP AMORPHOUS-CARBON SILICON ALLOYS. DIAMOND AND RELATED MATERIALS, 2(5-7), 773-777 [10.1016/0925-9635(93)90221-M].
Titolo: | STRUCTURAL, OPTICAL AND ELECTRONIC-PROPERTIES OF WIDE-BAND GAP AMORPHOUS-CARBON SILICON ALLOYS | |
Autori: | ||
Data di pubblicazione: | 1993 | |
Rivista: | ||
Citazione: | DECESARE G, GALLUZZI F, GUATTARI G, LEO G, VINCENZONI R, & BEMPORAD E (1993). STRUCTURAL, OPTICAL AND ELECTRONIC-PROPERTIES OF WIDE-BAND GAP AMORPHOUS-CARBON SILICON ALLOYS. DIAMOND AND RELATED MATERIALS, 2(5-7), 773-777 [10.1016/0925-9635(93)90221-M]. | |
Abstract: | Hydrogenated carbon-silicon alloys with carbon fraction X(C) between 0.2 and 0.8 have been deposited and characterized. For X(C) less-than-or-equal-to 0.5 it is shown that Si/SiC phases whose electronic properties can be optimized by using an H-2 dilution higher than 90% and a substrate temperature T(d) almost-equal-to 300-degrees-C are preferentially deposited. For X(C) > 0.5 the deposited material contains polymer-like phases which are responsible for high optical transparency and poor electronic properties. | |
Handle: | http://hdl.handle.net/11590/131515 | |
Appare nelle tipologie: | 1.1 Articolo in rivista |