Hydrogenated carbon-silicon alloys with carbon fraction X(C) between 0.2 and 0.8 have been deposited and characterized. For X(C) less-than-or-equal-to 0.5 it is shown that Si/SiC phases whose electronic properties can be optimized by using an H-2 dilution higher than 90% and a substrate temperature T(d) almost-equal-to 300-degrees-C are preferentially deposited. For X(C) > 0.5 the deposited material contains polymer-like phases which are responsible for high optical transparency and poor electronic properties.

Decesare, G., Galluzzi, F., Guattari, G., Leo, G., Vincenzoni, R., Bemporad, E. (1993). STRUCTURAL, OPTICAL AND ELECTRONIC-PROPERTIES OF WIDE-BAND GAP AMORPHOUS-CARBON SILICON ALLOYS. DIAMOND AND RELATED MATERIALS, 2(5-7), 773-777 [10.1016/0925-9635(93)90221-M].

STRUCTURAL, OPTICAL AND ELECTRONIC-PROPERTIES OF WIDE-BAND GAP AMORPHOUS-CARBON SILICON ALLOYS

BEMPORAD, Edoardo
1993-01-01

Abstract

Hydrogenated carbon-silicon alloys with carbon fraction X(C) between 0.2 and 0.8 have been deposited and characterized. For X(C) less-than-or-equal-to 0.5 it is shown that Si/SiC phases whose electronic properties can be optimized by using an H-2 dilution higher than 90% and a substrate temperature T(d) almost-equal-to 300-degrees-C are preferentially deposited. For X(C) > 0.5 the deposited material contains polymer-like phases which are responsible for high optical transparency and poor electronic properties.
Decesare, G., Galluzzi, F., Guattari, G., Leo, G., Vincenzoni, R., Bemporad, E. (1993). STRUCTURAL, OPTICAL AND ELECTRONIC-PROPERTIES OF WIDE-BAND GAP AMORPHOUS-CARBON SILICON ALLOYS. DIAMOND AND RELATED MATERIALS, 2(5-7), 773-777 [10.1016/0925-9635(93)90221-M].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/131515
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