CW-laser crystallization of amorphous silicon carbon alloys has been investigated as a function of both laser power density and alloy composition. Irradiation of such alloys generally yields phase segregation into crystalline silicon and crystalline graphite, depending on the laser power density, while crystalline SiC phase can be obtained only when nearly stoichiometric amorphous silicon-carbon alloy are irradiated. (C) 1999 Published by Elsevier Science B.V. All rights reserved.
Palma, C., Rossi, M.C., Sapia, C., Bemporad, E. (1999). Laser-induced crystallization of amorphous silicon-carbon alloys studied by Raman microspectroscopy. APPLIED SURFACE SCIENCE, 138, 24-28 [10.1016/S0169-4332(98)00382-1].
Laser-induced crystallization of amorphous silicon-carbon alloys studied by Raman microspectroscopy
ROSSI, Maria Cristina;SAPIA, Carmine;BEMPORAD, Edoardo
1999-01-01
Abstract
CW-laser crystallization of amorphous silicon carbon alloys has been investigated as a function of both laser power density and alloy composition. Irradiation of such alloys generally yields phase segregation into crystalline silicon and crystalline graphite, depending on the laser power density, while crystalline SiC phase can be obtained only when nearly stoichiometric amorphous silicon-carbon alloy are irradiated. (C) 1999 Published by Elsevier Science B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
