The valence band states of a-Si1-xCx:H have been studied by combining photoemission and Auger spectroscopies. It was possible to establish the relative positions of the onsets and of the maxima of the local electronic-state density at C and Si atoms. It was also found that heteronuclear Si-C bonds are strongly favoured.
Evangelisti, F., DE SETA, M. (1993). ELECTRONIC-STRUCTURE OF A-SI1-XCX-H ALLOYS. JOURNAL OF PHYSICS. CONDENSED MATTER, 5, A331-A332 [10.1088/0953-8984/5/33A/120].
ELECTRONIC-STRUCTURE OF A-SI1-XCX-H ALLOYS
DE SETA, Monica
1993-01-01
Abstract
The valence band states of a-Si1-xCx:H have been studied by combining photoemission and Auger spectroscopies. It was possible to establish the relative positions of the onsets and of the maxima of the local electronic-state density at C and Si atoms. It was also found that heteronuclear Si-C bonds are strongly favoured.File in questo prodotto:
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