The effect of the deposition rate on the size, density, and uniformity of Ge islands grown on Si(100) is investigated. Upon changing the growth rate from 4 to 110 ML/min the island density increases by one order of magnitude and the strained dome base decreases from 84 to 55 nm. A narrowing of the island size distribution was also observed. We discuss these experimental findings by taking into account island-island interaction effects. (C) 2003 American Institute of Physics.
Capellini, G., DE SETA, M., Evangelisti, F. (2003). Ge/Si(100) islands: Growth dynamics versus growth rate. JOURNAL OF APPLIED PHYSICS, 93(1), 291-295 [10.1063/1.1527211].
Ge/Si(100) islands: Growth dynamics versus growth rate
DE SETA, Monica;
2003-01-01
Abstract
The effect of the deposition rate on the size, density, and uniformity of Ge islands grown on Si(100) is investigated. Upon changing the growth rate from 4 to 110 ML/min the island density increases by one order of magnitude and the strained dome base decreases from 84 to 55 nm. A narrowing of the island size distribution was also observed. We discuss these experimental findings by taking into account island-island interaction effects. (C) 2003 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
