We numerically study a narrowband semiconductor integrated source of counterpropagating twin photons for line-of-sight experiments in quantum key distribution. Considering the air transparency and the availability of silicon avalanche photodiodes to be around 770 nm, we focus on GaN- and ZnSe-based quadratically nonlinear multilayer waveguides. The design of a quasi-phase-matched chi((2)) profile in the growth direction allows us to generate 3 X 10(5) guided photon pairs per second for a pump power around 300 mW. (c) 2005 Optical Society of America.

Ducci, S., Leo, G., Berger, V., De Rossi, A., Assanto, G. (2005). Integrated twin-photon sources for the silicon absorption band: a numerical study. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA. B, OPTICAL PHYSICS, 22(11), 2331-2337 [10.1364/JOSAB.22.002331].

Integrated twin-photon sources for the silicon absorption band: a numerical study

ASSANTO, GAETANO
2005-01-01

Abstract

We numerically study a narrowband semiconductor integrated source of counterpropagating twin photons for line-of-sight experiments in quantum key distribution. Considering the air transparency and the availability of silicon avalanche photodiodes to be around 770 nm, we focus on GaN- and ZnSe-based quadratically nonlinear multilayer waveguides. The design of a quasi-phase-matched chi((2)) profile in the growth direction allows us to generate 3 X 10(5) guided photon pairs per second for a pump power around 300 mW. (c) 2005 Optical Society of America.
Ducci, S., Leo, G., Berger, V., De Rossi, A., Assanto, G. (2005). Integrated twin-photon sources for the silicon absorption band: a numerical study. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA. B, OPTICAL PHYSICS, 22(11), 2331-2337 [10.1364/JOSAB.22.002331].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/133311
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