We have applied atomic force microscopy and x-ray photoemission spectroscopy to the study of SiGe intermixing in Ge/Si(100) self-assembled islands. We have quantified the Ge/Si alloying as a function of the deposition temperature in the 500-850 degreesC range. The Si content inside the islands varies from 0% at 550 degreesC up to 72% at 850 degreesC. As a consequence of the reduction of the effective mismatch due to the observed SiGe intermixing, the critical base width for island nucleation increases from 25 nm for T-dep< 600 degreesC up to 270 nm for T-dep=850 degreesC. (C) 2001 American Institute of Physics.
Capellini G, De Seta M, & Evangelisti F (2001). SiGe intermixing in Ge/Si(100) islands. APPLIED PHYSICS LETTERS, 78(3), 303-305 [10.1063/1.1339263].
Titolo: | SiGe intermixing in Ge/Si(100) islands | |
Autori: | ||
Data di pubblicazione: | 2001 | |
Rivista: | ||
Citazione: | Capellini G, De Seta M, & Evangelisti F (2001). SiGe intermixing in Ge/Si(100) islands. APPLIED PHYSICS LETTERS, 78(3), 303-305 [10.1063/1.1339263]. | |
Abstract: | We have applied atomic force microscopy and x-ray photoemission spectroscopy to the study of SiGe intermixing in Ge/Si(100) self-assembled islands. We have quantified the Ge/Si alloying as a function of the deposition temperature in the 500-850 degreesC range. The Si content inside the islands varies from 0% at 550 degreesC up to 72% at 850 degreesC. As a consequence of the reduction of the effective mismatch due to the observed SiGe intermixing, the critical base width for island nucleation increases from 25 nm for T-dep< 600 degreesC up to 270 nm for T-dep=850 degreesC. (C) 2001 American Institute of Physics. | |
Handle: | http://hdl.handle.net/11590/133347 | |
Appare nelle tipologie: | 1.1 Articolo in rivista |