We have applied atomic force microscopy and x-ray photoemission spectroscopy to the study of SiGe intermixing in Ge/Si(100) self-assembled islands. We have quantified the Ge/Si alloying as a function of the deposition temperature in the 500-850 degreesC range. The Si content inside the islands varies from 0% at 550 degreesC up to 72% at 850 degreesC. As a consequence of the reduction of the effective mismatch due to the observed SiGe intermixing, the critical base width for island nucleation increases from 25 nm for T-dep< 600 degreesC up to 270 nm for T-dep=850 degreesC. (C) 2001 American Institute of Physics.

Capellini, G., DE SETA, M., Evangelisti, F. (2001). SiGe intermixing in Ge/Si(100) islands. APPLIED PHYSICS LETTERS, 78(3), 303-305 [10.1063/1.1339263].

SiGe intermixing in Ge/Si(100) islands

DE SETA, Monica;
2001-01-01

Abstract

We have applied atomic force microscopy and x-ray photoemission spectroscopy to the study of SiGe intermixing in Ge/Si(100) self-assembled islands. We have quantified the Ge/Si alloying as a function of the deposition temperature in the 500-850 degreesC range. The Si content inside the islands varies from 0% at 550 degreesC up to 72% at 850 degreesC. As a consequence of the reduction of the effective mismatch due to the observed SiGe intermixing, the critical base width for island nucleation increases from 25 nm for T-dep< 600 degreesC up to 270 nm for T-dep=850 degreesC. (C) 2001 American Institute of Physics.
Capellini, G., DE SETA, M., Evangelisti, F. (2001). SiGe intermixing in Ge/Si(100) islands. APPLIED PHYSICS LETTERS, 78(3), 303-305 [10.1063/1.1339263].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/133347
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