One possible way to grow crystalline silicon carbide (SiC) on Si (100) is to deposit fullerene molecules followed by an annealing at temperatures higher than 800 degrees C, where the C-60 molecule breaks. In this paper we present the photoemission study results on these films. X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS) show the SiC formation and evolution, when the annealing temperature is varied between 800 degrees C and 850 degrees C. Crystalline and relaxed films were obtained by annealing at 850 degrees C. For these films, the valence band spectra given by UPS measurements show similar features as for crystalline SiC bulk.
Tomozeiu, N., DE SETA, M., Evangelisti, F. (1999). Photoemission study of SiC films grown on Si wafers by using C-60 precursors. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 1(3), 37-42.
Photoemission study of SiC films grown on Si wafers by using C-60 precursors
DE SETA, Monica;
1999-01-01
Abstract
One possible way to grow crystalline silicon carbide (SiC) on Si (100) is to deposit fullerene molecules followed by an annealing at temperatures higher than 800 degrees C, where the C-60 molecule breaks. In this paper we present the photoemission study results on these films. X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS) show the SiC formation and evolution, when the annealing temperature is varied between 800 degrees C and 850 degrees C. Crystalline and relaxed films were obtained by annealing at 850 degrees C. For these films, the valence band spectra given by UPS measurements show similar features as for crystalline SiC bulk.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
