Valence-band photoemission at a photon energy of 32 eV has been carried out on Ge(100) from below room temperature to 1173 K. The c(4X2)-->2x1 phase transition is accompanied by a shifting of a back-bond-derived surface state. The high-temperature 2x1-->1x1 transition is apparent in the discontinuity in the measured emission intensity of both a bulk and a surface electronic state. A further discontinuity occurs in both of these features and of the Fermi level intensity at higher temperature, approximately 1075 K, indicating the presence of a further reversible phase transition whose nature is discussed.
Laine, A.d., DE SETA, M., Cepek, C., Vandre, S., Goldoni, A., Franco, N., et al. (1998). Surface phase transitions of Ge(100) from temperature-dependent valence-band photoemission. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 57(23), 14654-14657 [10.1103/PhysRevB.57.14654].
Surface phase transitions of Ge(100) from temperature-dependent valence-band photoemission
DE SETA, Monica;
1998-01-01
Abstract
Valence-band photoemission at a photon energy of 32 eV has been carried out on Ge(100) from below room temperature to 1173 K. The c(4X2)-->2x1 phase transition is accompanied by a shifting of a back-bond-derived surface state. The high-temperature 2x1-->1x1 transition is apparent in the discontinuity in the measured emission intensity of both a bulk and a surface electronic state. A further discontinuity occurs in both of these features and of the Fermi level intensity at higher temperature, approximately 1075 K, indicating the presence of a further reversible phase transition whose nature is discussed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
