The authors demonstrate a two-dimensional array of Si-integrated photodetectors equipped with readout electronics and operating in the near infrared. The chip is realized in polycrystalline Ge on a silicon complementary metal oxide semiconductor circuitry and includes 512 pixels, 64 analog to digital converters, dark current cancellation, and test/calibration facilities. They describe its design, fabrication, characterization, and operation as a near-infrared image sensor.

Colace, L., Masini, G., Cozza, S., Assanto, G., Denotaristefani, F., Cencelli, V. (2007). Near-infrared camera in polycrystalline germanium integrated on complementary-metal-oxide semiconductor electronics. APPLIED PHYSICS LETTERS, 90(1) [10.1063/1.2425018].

Near-infrared camera in polycrystalline germanium integrated on complementary-metal-oxide semiconductor electronics

ASSANTO, GAETANO;
2007-01-01

Abstract

The authors demonstrate a two-dimensional array of Si-integrated photodetectors equipped with readout electronics and operating in the near infrared. The chip is realized in polycrystalline Ge on a silicon complementary metal oxide semiconductor circuitry and includes 512 pixels, 64 analog to digital converters, dark current cancellation, and test/calibration facilities. They describe its design, fabrication, characterization, and operation as a near-infrared image sensor.
Colace, L., Masini, G., Cozza, S., Assanto, G., Denotaristefani, F., Cencelli, V. (2007). Near-infrared camera in polycrystalline germanium integrated on complementary-metal-oxide semiconductor electronics. APPLIED PHYSICS LETTERS, 90(1) [10.1063/1.2425018].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/133424
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