The authors demonstrate a two-dimensional array of Si-integrated photodetectors equipped with readout electronics and operating in the near infrared. The chip is realized in polycrystalline Ge on a silicon complementary metal oxide semiconductor circuitry and includes 512 pixels, 64 analog to digital converters, dark current cancellation, and test/calibration facilities. They describe its design, fabrication, characterization, and operation as a near-infrared image sensor.
Colace L, Masini G, Cozza S, Assanto G, DeNotaristefani F, & Cencelli V (2007). Near-infrared camera in polycrystalline germanium integrated on complementary-metal-oxide semiconductor electronics. APPLIED PHYSICS LETTERS, 90(1).
Titolo: | Near-infrared camera in polycrystalline germanium integrated on complementary-metal-oxide semiconductor electronics |
Autori: | |
Data di pubblicazione: | 2007 |
Rivista: | |
Citazione: | Colace L, Masini G, Cozza S, Assanto G, DeNotaristefani F, & Cencelli V (2007). Near-infrared camera in polycrystalline germanium integrated on complementary-metal-oxide semiconductor electronics. APPLIED PHYSICS LETTERS, 90(1). |
Abstract: | The authors demonstrate a two-dimensional array of Si-integrated photodetectors equipped with readout electronics and operating in the near infrared. The chip is realized in polycrystalline Ge on a silicon complementary metal oxide semiconductor circuitry and includes 512 pixels, 64 analog to digital converters, dark current cancellation, and test/calibration facilities. They describe its design, fabrication, characterization, and operation as a near-infrared image sensor. |
Handle: | http://hdl.handle.net/11590/133424 |
Appare nelle tipologie: | 1.1 Articolo in rivista |