Benvenuti nell'Anagrafe della Ricerca d'Ateneo
La valutazione delle attività di ricerca che si svolgono nelle università ha assunto un'importanza rilevante sia per l'intero sistema universitario sia all'interno di ogni singolo ateneo. Roma Tre si è quindi dotata di idonei strumenti informativi in grado di supportare al meglio le azioni di monitoraggio e di valutazione delle attività di ricerca svolte nei propri dipartimentied ha realizzato una Anagrafe della Ricerca di Ateneo.
EnglishPlanar Al/GaN/Ni Schottky diodes were realized on GaN films deposited on sapphire substrates and characterized in the dark and under illumination. The optoelectronic characteristics of GaNphotodetectors appear largely influenced by structural defects and impurities, which are clearly detected in photocurrent yield measurements. In particular, an exponential increase of the photocurrent is observed and explained in terms of a barrier lowering photoeffect, hence a light-induced shrinking of the space charge region, related to carrier trapping at defects and impurities. Trapping events are also responsible for a dispersive behavior of the AC responsivity with the light chopping frequency. Such effects point out the importance of a proper selection of bias voltage and working frequency for GaNphotodetector operations.
Calvani, P., Girolami, M., Carta, S., Rossi, M.C., & Conte, G. (2009). Optoelectronic performance of GaN-basedUV photodetectors. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT, 610(1), 311-313.
| Titolo: | Optoelectronic performance of GaN-basedUV photodetectors |
| Autori: | |
| Data di pubblicazione: | 2009 |
| Rivista: | |
| Citazione: | Calvani, P., Girolami, M., Carta, S., Rossi, M.C., & Conte, G. (2009). Optoelectronic performance of GaN-basedUV photodetectors. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT, 610(1), 311-313. |
| Abstract: | Planar Al/GaN/Ni Schottky diodes were realized on GaN films deposited on sapphire substrates and characterized in the dark and under illumination. The optoelectronic characteristics of GaNphotodetectors appear largely influenced by structural defects and impurities, which are clearly detected in photocurrent yield measurements. In particular, an exponential increase of the photocurrent is observed and explained in terms of a barrier lowering photoeffect, hence a light-induced shrinking of the space charge region, related to carrier trapping at defects and impurities. Trapping events are also responsible for a dispersive behavior of the AC responsivity with the light chopping frequency. Such effects point out the importance of a proper selection of bias voltage and working frequency for GaNphotodetector operations. |
| Handle: | http://hdl.handle.net/11590/133834 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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