On the basis of RF characteristics and measured small-signal parameters, an equivalent circuit model was formulated and characterized for metal-semiconductor field effect transistors based on H-terminated polycrystalline diamond. Starting from on-wafer measurements, a bias-dependent transistor behavior representation was fully determined. Such an equivalent circuit model is the first important step to realize an RF IC based on diamond.
Pasciuto, B., Ciccognani, W., Limiti, E., Serino, A., Calvani, P., Corsaro, A., et al. (2009). Modeling of diamond field-effect transistors for rf ic development. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 51(11), 2783-2786.
Modeling of diamond field-effect transistors for rf ic development
Conte, GSupervision
;ROSSI, Maria Cristina
2009-01-01
Abstract
On the basis of RF characteristics and measured small-signal parameters, an equivalent circuit model was formulated and characterized for metal-semiconductor field effect transistors based on H-terminated polycrystalline diamond. Starting from on-wafer measurements, a bias-dependent transistor behavior representation was fully determined. Such an equivalent circuit model is the first important step to realize an RF IC based on diamond.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
